Cymer, Inc.

Herve A Besaucele

Richard L Sandstrom

William N Partlo

Igor Vladimirovich Fomenkov

Alexander Igorevich Ershov

Richard M Ness

Palash P Das

Richard C Ujazdowski

Daniel J W Brown

Eckehard D Onkels

David S Knowles

David Wayne Myers

William G Hulburd

Stuart L Anderson

Thomas Hofmann

Scott T Smith

Toshihiko Ishihara

Daniel Anthony Rothweil

Robert G Ozarski

Jeffrey Oicles

Richard G Morton

Peter Clarke Newman

Thomas Patrick Duffey

German E Rylov

Scot T Smith

Tibor Juhasz

Robert N Jacques

Tom A Watson

R Kyle Webb

John T Melchior

Fedor Trintchouk

Wayne J Dunstan

Jean-Marc Hueber

James H Azzola

Kevin M O'Brien

David J Warkentin

Xiaojiang Jason Pan

Vladimir B Fleurov

Paul S Thompson

Gamaralalage G Padmabandu

Ronald L Spangler

Shahryar Rokni

Paolo Zambon

Leonard Lublin

Brian C Klene

Hao Ton-That

Aravind Ratnam

David W Meyers

Plash P Das

Hao Ton That

Fedor Trintichouk

A method and apparatus are disclosed which may comprise predicting the gas lifetime for a gas discharge laser light source for a photolithography process, the light source comprising a halogen containing lasing gas may comprise: utilizing at least one of a plurality of laser operating input and/or output parameters; utilizing a set of at least one parameter of utilization in the photolithography process to determine a gas use model in relation to the respective input or output parameter; predicting the end of gas life based upon the model and a measurement of the respective input or output parameter. The parameter may comprise a pulse utilization pattern. The method and apparatus may comprise performing gas management for a gas discharge laser light source for a photolithography process, the light source comprising a halogen containing lasing gas comprising: utilizing periodic and frequent partial gas refills comprising an inject comprising a mixture of halogen gas and bulk gas in generally the same ration as the premix ratio provided to the laser in a full gas refill, and in an amount less than two percent of the total gas pressure prior to the injection.

Laser gas injection system

A multi-chambered excimer or molecular halogen gas discharge laser system comprising at least one oscillator chamber and at least one amplifier chamber producing oscillator output laser light pulses that are amplified in the at least one power chamber, having a fluorine injection control system and a method of using same is disclosed, which may comprise: a halogen gas consumption estimator: estimating the amount of halogen gas that has been consumed in one of the at least one oscillator chamber based upon at least a first operating parameter of one of the least one oscillator chamber and the at least one amplifier chamber, and the difference between a second operating parameter of the at least one oscillator chamber and the at least one amplifier chamber, and estimating the amount of halogen gas that has been consumed in the other of the at least one oscillator chamber and the at least one amplifier chamber based upon at least a third operating parameter of the other of the at least one oscillator chamber and the at least one amplifier chamber, and producing an output representative of an estimated halogen gas consumption in the at least one oscillator chamber and of the halogen gas consumption in the at least one amplifier chamber, and a halogen gas injection controller determining the amount of halogen gas injection for the at least one oscillator chamber and the at least one amplifier chamber based upon the estimated fluorine consumption outputs from the fluorine consumption estimator and a cost function comprising a plurality of weighted injection decision determinations.

Multi-chambered excimer or molecular fluorine gas discharge laser fluorine injection control

An oscillator-amplifier gas discharge laser system and method is disclosed which may comprise a first laser unit which may comprise a first discharge region which may contain an excimer or molecular fluorine lasing gas medium; a first pair of electrodes defining the first discharge region containing the lasing gas medium, a line narrowing unit for narrowing a spectral bandwidth of output laser light pulse beam pulses produced in said first discharge region; a second laser unit which may comprise a second discharge chamber which may contain an excimer or molecular fluorine lasing gas medium; a second pair of electrodes defining the second discharge region containing the lasing gas medium; a pulse power system providing electrical pulses to the first pair of electrodes and to the second pair of electrodes producing gas discharges in the lasing gas medium between the respective first and second pair of electrodes, and laser parameter control mechanism modifying a selected parameter of a selected laser output light pulse beam pulse produced by said gas discharge laser system by controlling the timing of the occurrence of the gas discharge between the first pair of electrodes and the occurrence of the gas discharge between the second pair of electrodes.

Very narrow band, two chamber, high rep-rate gas discharge laser system

A line narrowed gas discharge laser system and method of operation are disclosed which may comprise: an oscillator cavity; a laser chamber comprising a chamber housing containing a lasing medium gas; at least one peaking capacitor electrically connected to the chamber housing and to a first one of a pair of electrodes; a second one of the pair of electrodes connected to an opposite terminal of the at least one peaking capacitor; a current return path connected to the chamber housing; the one terminal, the first one of the electrodes, the lasing medium gas, the second one of the electrodes, the current return path and the second terminal forming a head current inductive loop having an inductance unique to the particular head current inductive loop; a spectral quality tuning mechanism comprising a mechanism for changing the particular head current inductive loop inductance value for the particular head current inductance loop.

Gas discharge laser output light beam parameter control

An injection seeded modular gas discharge laser system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in a Flaser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan providing sufficient gas flow to permit operation at pulse rates of 4000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses. The master oscillator is equipped with a line selection package for selecting the strongest Fspectral line.

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Line selected F2 two chamber laser system

An injection seeded modular gas discharge laser system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in an ArF excimer laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan providing sufficient gas flow to permit operation at pulse rates of 4000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses. The master oscillator is equipped with a line narrowing package having a very fast tuning mirror capable of controlling centerline wavelength on a pulse-to-pulse basis at repetition rates of 4000 Hz or greater to a precision of less than 0.2 pm.

Very narrow band, two chamber, high reprate gas discharge laser system

An injection seeded modular gas discharge laser system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in a F laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan providing sufficient gas flow to permit operation at pulse rates of 4000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses. The master oscillator is equipped with a line selection package for selecting the strongest F spectral line.

The present invention provides a modular high repetition rate ultraviolet gas discharge laser light source for a production line machine. The system includes an enclosed and purged beam path with beam pointing control for delivery the laser beam to a desired location such as the entrance port of the production line machine. In preferred embodiments, the production line machine is a lithography machine and two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. This MOPA system is capable of output pulse energies approximately double the comparable single chamber laser system with greatly improved beam quality. A pulse stretcher more than doubles the output pulse length resulting in a reduction in pulse power (mJ/ns) as compared to prior art laser systems. This preferred embodiment is capable of providing illumination at a lithography system wafer plane which is approximately constant throughout the operating life of the lithography system, despite substantial degradation of optical components.

Lithography laser with beam delivery and beam pointing control

Very narrow band, two chamber, high rep rate gas discharge laser system

A reliable modular production quality ArF excimer laser capable of producing laser pulses at repetition rates in the range of 3,000 to 4,000 Hz or greater with pulse energies in the range of about 2 mJ to 5 mJ or greater with a full width half, maximum bandwidth of about 0.4 pm or less and dose stability of less than 0.4 percent. Using this laser as an illumination source, stepper or scanner equipment can produce integrated circuit resolution of 0.10 &mgr;m (100 nm) or less. Replaceable modules include a laser chamber; a modular pulse power system; and a line narrowing module. For a given laser power output, the higher repetition rate provides two important advantages. The lower per pulse energy means less optical damage and the larger number of pulses for a specified illumination dose means better dose stability.

ArF laser with low pulse energy and high rep rate

Reliable, modular, production quality narrow-band high rep rate ArF excimer laser

The present invention provides a very narrow band pulse excimer laser capable of producing pulses at a rate in the range of about 500 to 2000 Hz with enhanced energy dose control and reproducibility. Very small quantities of a stablizing additive consisting of oxygen or a heavy noble gas (xenon or radon for KrF lasers, or krypton, xenon or radon for ArF lasers), are added to the gas mixture. Tests performed show substantial improvements in energy stability with the addition of about 30 ppm of xenon to a KrF laser. Tests show improved performance for the ArF lasers with the addition of about 6-10 ppm of Xe or 40 ppm of Kr. In a preferred embodiment very narrow bandwidth is achieved on a KrF laser by reducing fluorine partial pressure to less than 0.10 percent and by increasing the reflectance of the output coupler to greater than 25 percent. In a preferred embodiment, prior art fused silica beam expansion prisms used in the prior art line-narrowing module were replaced with calcium fluoride prisms.

Narrow band gas discharge laser with gas additive

Growing community of inventors

San Diego, CA, United States of America

Herve A Besaucele