Lucent Technologies Inc.

Henry Y Kumagai

King Lien Tai

Ratnaji R Kola

Paul A Sullivan

Maureen Yee Lau

Salvador Duenas

Glenn Roy Hower

A thin film capacitor for use in semiconductor integrated circuit devices such as analog circuits, rf circuits, and dynamic random access memories (DRAMs), and a method for its fabrication, is disclosed. The capacitor has a dielectric thickness less than about 50 nm, a capacitance density of at least about 15 fF/.mu.m.sup.2, and a breakdown field of at least about 1 MV/cm. The dielectric material is a metal oxide of either titanium, niobium, or tantalum. The metal oxide can also contain silicon or nitrogen. The dielectric material is formed over a first electrode by depositing the metal onto the substrate or onto a first electrode formed on the substrate. The metal is then anodically oxidized to form the dielectric material of the desired thickness. A top electrode is then formed over the dielectric layer. The top electrode is a metal that does not degrade the electrical characteristics (e.g. the leakage current or the breakdown voltage) of the dielectric layer.

Thin film capacitors and process for making them

An improved apparatus and method for the manufacture of integrated circuits is disclosed. At least three protrusions extend from the wafer support susceptor. The protrusions slightly electrically decouple the wafer from the susceptor during plasma processing. The protrusions prevent gradual debris build-up on the susceptor from causing variation from lot-to-lot in plasma processing results.

Apparatus and method for making integrated circuits

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Orefield, PA, United States of America

Henry Y Kumagai