At&s (china) Co. Ltd.

Henry Guo

Kim Liu

Seok Kim Tay

Nick Xin

Artan Baftiri

Mikael Tuominen

Howard Li

A method of manufacturing a component carrier includes providing a laminated stack with at least one electrically conductive layer structure and/or at least one electrically insulating layer structure, at least partially covering a component with a transition layer having a thickness in a range from 0.5 nm to 1 μm, and assembling the component with the stack.

Component carrier having component covered with ultra-thin transition layer

A component carrier with a stack having at least one electrically conductive layer structure and a plurality of electrically insulating layer structures and a component embedded in the stack. The plurality of electrically insulating layer structures include a first dielectric structure and a second dielectric structure differing concerning at least one physical property.

Component carrier comprising dielectric structures with different physical properties

Growing community of inventors

Suqian, China

Henry Guo