Az Electronic Materials USA Corp.

Az Electronic Materials (Luxembourg) S.a.r.l.

Merck Patent Gmbh

Other

Clariant Finance (Bvi) Limited

Ridgefield Acquisition

Z Electronic Materials USA Corp.

Hengpeng Wu

Mark O Neisser

Jian Yin

Guanyang Lin

Jianhui Shan

Shuji Sue Ding-Lee

Yi Cao

SungEun Hong

Margareta Paunescu

JiHoon Kim

Zhong Xiang

Huirong Yao

Hong Zhuang

Joseph E Oberlander

PingHung Lu

Aritaka Hishida

Muthiah Thiyagarajan

Eleazar B Gonzalez

Ralph R Dammel

David J Abdallah

Ruzhi Zhang

Durairaj Baskaran

Robert Arent

Zhong Xhiang

Medhat E Toukhy

M Dalil Rahman

Ping-Hung Lu

Salem K Mullen

Tomohide Katayama

Orest Polishchuk

WooKyu Kim

Meng Li

Wenbing Kang

Woo-Kyu Kim

Md S Rahman

Jinxiu Wan

Shinji Miyazaki

DongKwan Lee

Yu Sui

Jainhui Shan

Eleazor B Gonzalez

The present invention relates to a composition including a sulfonic acid selected from the group consisting of an alkylbenzenesulfonic acid, or its hydrate, a sulfosalicyclic, or its hydrate, and mixtures thereof and the solvent dipropylene glycol dimethyl ether [CAS registry number 111109-77-4] (III).

Photoresist remover compositions

The present invention relates to a composition comprises at least one random copolymer having at least one repeat unit of structure (1), The present invention also relates to novel processes for forming patterns using this novel crosslinked layer on a substrate by enable a film of a block copolymer coated on the novel crosslinked layer to undergo self-assembly. 

Polymer compositions for self-assembly applications

The present invention relates to a composition consisting essentially of a sulfonic acid component selected from the group consisting of camphor sulfonic acid, and a benzene sulfonic acid of structure (I), wherein R is H or a C-1 to C-18 n-alkyl, oxalic acid, a solvent component which consists essentially of an organic solvent component, or a mixture of an organic solvent components and water, wherein the organic solvent component consist of about 100 wt % to about 85 wt % of said solvent component, and further wherein said organic solvent component is either selected from solvent (III), (IV), (V), (VI) (wherein R is selected from the group consisting of &#x2014;(-0-CH&#x2014;CH&#x2014;), &#x2014;OH, &#x2014;OH, and -0-C(&#x2550;O)&#x2014;CH, wherein n' is equal to 1, 2, 3, or 4), (VII) (wherein Ra is H or a C-1 to C-4 alkyl moiety), (VIII), (IX) (wherein Rb is a C-1 to C-18 alkyl moiety), (X), and (XI) or is a mixture, of at least two organic solvents selected from this group. The invention also relates to such compositions also containing a surfactant component, and also pertains to the process of using either of these compositions as a resist remover. Dipropylene glycol monomethyl ether (III), 

The present invention relates to a composition consisting essentially of an alkylbenzenesulfonic acid having structure (I) (wherein n is an integer from 0 to 16); a solvent which is either selected from the group consisting of solvents having structures (II), (wherein R is selected from the group consisting of &#x2014;(&#x2014;O&#x2014;CH&#x2014;CH&#x2014;)&#x2014;OH, &#x2014;OH, &#x2014;O&#x2014;C(&#x2550;O)&#x2014;CH, wherein n' is equal to 1, 2, 3, or 4), a solvent having structure (III), a solvent having structure (IV), and a solvent having structure (V), or a solvent mixture, of at least two solvents selected from this group. In another embodiment, the composition also consists of, additionally, a surfactant component. This invention also relates to using either of these compositions to remove a patterned photoresist from a substrate. 

The present invention relates to a remover composition comprising, tetraalkylammonium hydroxide, a benzylic alcohol, a glycol component comprising at least one glycol compound, and a and an alkyl amine component, wherein said alkyl amine component is selected from the group consisting of a dialkyl amine, a mono-alkyl amine having structure having structure (I), and combinations thereof wherein, in said di-alkyl amine, one of the alkyl groups is a C-1 to C-4 n-alkyl and the other alkyl group is a C-16 to C-20 n-alkyl, and for said mono-alkyl amine m' and m are independently chosen from an integer ranging from 4 to 8. This invention also pertains to the process of using these compositions to remove a patterned photoresist from a substrate. 

The present invention relates to a novel styrenic polymer and to the novel composition comprised of this polymer and a solvent; wherein the styrenic polymer has a polydispersity from 1 to 1.3 and further wherein each polymer chain of the styrenic polymer is capped with one end group of structure 1), wherein, and L is a linking group selected from the group consisting of a direct valence bond, oxy (&#x2014;O&#x2014;), carbonyloxy, (&#x2014;(C&#x2550;O)&#x2014;O&#x2014;), carbonate (&#x2014;O&#x2014;(C&#x2550;O)&#x2014;O&#x2014;); Lis a C-1 to C-20 substituted or unsubstituted alkylene spacer, an arylene spacer or a direct valence bond, R, is hydrogen, a halide, a C-1 to C-20 alkyl moiety, or a C-1 to C-20 alkyloxy moiety, m is an integer from 1 to 3; and (I) represent the direct valence bond attaching the end group 1) to the end of the polymer chain of the styrenic polymer. In another aspect of this invention it pertains to the use of this composition to create self-assembly process. 

Compositions and processes for self-assembly of block copolymers

Disclosed and claimed herein is a template for directing a pattern in a block copolymer film and the process of making the pattern.

Template for self assembly and method of making a self assembled pattern

The present invention relates to non aqueous, graftable coating composition comprised of a homogenous solution of a polymer and a spin casting organic solvent, where the composition does not contain acidic compounds, coloring particles, pigments or dyes, and the polymer has a linear polymer chain structure which is comprised of repeat units derived from monomers containing a single polymerizable olefinic carbon double bond, and the polymer contains at least one triarylmethyl chalcogenide containing moiety which is selected from the group consisting of repeat units having structure (I) an end chain group unit of structure (II) and mixtures thereof, and the polymer does not contain any repeat units or end groups containing water ionizable groups, ionic groups, free thiol groups, or free hydroxy groups, and where A, A, and Aare independently an Aryl or a substituted Aryl; Y is a chalcogen selected from O, S, Se or Te; Xand Xare individually selected organic spacers; Pis an organic polymer repeat unit moiety derived from a monomer containing a single polymerizable olefinic carbon double bound, and Pis an end group moiety derived from a monomer containing a single polymerizable olefinic carbon double bound, andrepresents a direct valence bond to the linear polymer.  The invention also relates to using this novel coating composition to form a grafted polymer film on a substrate.

Compositions and use thereof for modification of substrate surfaces

The present invention relates to novel copolymers containing cross-linkable and graft-able moieties, novel compositions comprised of these novel copolymers and a solvent, and methods for using these novel compositions to form neutral layer films which are both cross-linked and grafted on the substrate which are used in processes for aligning microdomains of block copolymers (BCP) on this neutral layer coated substrate such as self-assembly and directed self-assembly. The novel compositions are comprised of at least one novel random copolymer comprised of least one unit of structure (1), at least one unit of structure (2) at least one unit of structure (3) oneH end group and one end group having structure (1'); where Ris selected from the group consisting of a C-Calkyl, C-Cfluoroalkyl, C-Cpartially fluorinated alkyl moiety, C-Ccycloalkyl, C-Ccyclofluoroalkyl, C-Cpartially fluorinated cycloalkyl, and a C-Chydroxyalkyl; R, Rand Rare independently selected from a group consisting of H, C-Calkyl, CFand F; Ris selected from the group consisting of H, C-Calkyl, C-Cpartially fluorinated alkyl moiety and C-Cfluoroalkyl, n ranges from 1 to 5, Ris selected from the group consisting of H, F, C-Calkyl and a C-Cfluoroalkyl and m ranges from 1 to 3, and n&#x2032; ranges from 1 to 5, and n&#x2033; ranges from 1 to 5, n&#x2032;&#x2033; ranges from 1 to 5, Ris a Cto Calkyl and X is &#x2014;CN, or an alkyloxycarbonyl moiety R&#x2014;O&#x2014;(C&#x2550;O)&#x2014; where Ris a Cto Calkyl andrepresent the attachment point of the end group to the polymer. The novel polymers, compositions and processes are useful for fabrication of electronic devices.

The present invention relates to a novel diblock copolymer comprising a repeat unit (1) and a repeat unit (2), where Ris hydrogen or C-Calkyl, Ris selected from a group chosen from hydrogen, C-Calkyl, C-Calkoxy and halide, Ris selected from a group chosen from hydrogen, C-Calkyl and C-Cfluoroalkyl, and R, R, R, R, R, R, R, R, and Rare independently chosen from a C-Calkyl and n=1-6.  The invention also relates to a novel composition comprising the novel polymer and a solvent. The invention further relates to a process utilizing the novel composition for affecting directed self-assembly of the block copolymer.

Silicon containing block copolymers for direct self-assembly application

The present invention relates a novel aqueous composition comprising polymeric thermal acid generator and a process of coating the novel composition onto photoresist pattern, thereby forming a layer of the polymeric thermal acid generator over the photoresist pattern. The polymeric thermal acid generator comprises a polymer having at least one repeating unit of structure 2; where Rto Rare independently chosen from the group consisting of H and C-Calkyl; Ris chosen from the group consisting of unsubstituted aryl, substituted aryl, alkyl (C-C) and fluoroalkyl (C-C) and W is a C-Calkylene spacer.

Composition comprising a polymeric thermal acid generator and processes thereof

Disclosed herein is a formulation for depositing a cured underlayer for promoting the formation of self assembled structures. The underlayer comprises: (a) a polymer comprising at least one pendant vinyl ether monomer repeat unit having the structure, (I): wherein R is chosen from H, C-Calkyl, or halogen, and W is a divalent group chosen from C-Calkylene, C-Carylene, benzylene, or C-Calkyleneoxyalkylene; (ii) optional thermal acid generator; and (c) a solvent. The invention also relates to processes of forming a pattern using the underlayer.

Underlayer composition for promoting self assembly and method of making and using

The present invention relates to novel processes for using the neutral layer compositions for aligning microdomains of directed self-assembling block copolymers (BCP). The processes are useful for fabrication of electronic devices. The novel processes comprise a step of forming a coating of the neutral layer from the neutral layer composition, wherein the neutral layer composition comprises at least one random copolymer having at least one unit of structure (1), at least one unit of structure (2) and at least one unit of structure (3) where Ris selected from the group consisting of a C-Calkyl, C-Cfluoroalkyl moiety, C-Cpartially fluorinated alkyl, C-Ccycloalkyl, C-Ccyclofluoroalkyl, C-Cpartially fluorinated cycloalkyl, and a C-Chydroxyalkyl; R, Rand Rare independently selected from a group consisting of H, C-Calkyl, CFand F; Ris selected from the group consisting of H, C-Calkyl, C-Cpartially fluorinated alkyl and C-Cfluoroalkyl, n ranges from 1 to 5, Ris selected from the group consisting of H, F, C-Calkyl and a C-Cfluoroalkyl and m ranges from 1 to 3.

Compositions of neutral layer for directed self assembly block copolymers and processes thereof

The present invention relates to a method for treating a block copolymer solution, wherein the method comprises: providing a solution comprising a block copolymer in a non aqueous solvent; and, treating the solution to remove metals using an ion exchange resin. The invention also relates to a method of forming patterns using the treated block copolymer.

Methods and materials for removing metals in block copolymers

The present invention relates to an aqueous composition for coating over a photoresist pattern comprising a first water soluble compound comprising at least a silicon moiety and at least one amino group, and a second compound comprising at least 1 carboxylic acid group. The invention further relates to processes for using the novel invention.

Growing community of inventors

Hillsborough, NJ, United States of America

Hengpeng Wu