United Microelectronics Corp.

Heng-Seng Huang

Gary Y Hong

Yue-Shiun Lee

Shyh-Jye Lin

The present invention provides a C-V method for measuring an effective channel length in a device, which can simultaneously measure a gate-to-drain overlap length and a gate etch bias length in the device. In the present method, the measured length of the gate by using the present method has a deviation below 5% compared with the real gate length form SEM. Furthermore, the calculating method of the present invention only uses simple simultaneous equations, which can be measured by a man or a mechanism. As the layout rule shrunk, the present method provides a simple way to measure those parameters, which have become more and more important in the device.

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Taipei, Taiwan

Heng-Seng Huang