International Business Machines Corporation

Helmut M Gartner

Steve I Petvai

Kenneth Chang

Homi G Sarkary

Randolph Huff Schnitzel

Anthony J Hoeg, Jr

David C Cosman

Metals such as platinum and palladium are preferentially removed in the presence of their metal silicides by ion milling in a noble gas atmosphere such as argon. The process can be used on semiconductor chips to remove excess platinum after platinum silicide has been formed in the contact holes.

Ion milling of thin metal films

A method for forming thin film interconnection patterns atop substrates, particularly semiconductor substrates. It features the use of the passivation layer itself, typically glass, as a stable masking material to etch the conductive lines. Conversely, the metal conductor is used as a stable mask in etching the glass to form via holes. The process provides a practical resist system which is compatible with reactive ion etching or other dry etching process.

Method of forming thin film interconnection systems

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Wappingers Falls, NY, United States of America

Helmut M Gartner