Ict Integrated Circuit Testing Gesellschaft Fur Halbleiterpruftechnik Mbh

Other

Jeol Ltd.

Applied Materials Israel Limited

Helmut Banzhof

Juergen Frosien

Dieter Winkler

Pavel Adamec

Benyamin Buller

Xinrong Jiang

Steven Thomas Coyle

William J DeVore

Richard L Lozes

Henry Thomas Pearce-Percy

Gilad Almogy

Jürgen Frosien

Stefan Lanio

Dror Shemesh

Avishai Bartov

Jacob Levin

Ivo Liska

Achim Göhl

A multi-beam scanning electron beam device () is described. The multi-bea scanning electron beam device having a column, includes a multi-beam emitter () for emitting a plurality of electron beams (), at least one common electron beam optical element () having a common opening for at least two of the plurality of electron beams and being adapted for commonly influencing at least two of the plurality of electron beams, at least one individual electron beam optical element () for individually influencing the plurality of electron beams, a common objective lens assembly () for focusing the plurality of electrons beams having a common excitation for focusing at least two of the plurality of electron beams, and adapted for focusing the plurality of electron beams onto a specimen () for generation of a plurality of signal beams (), and a detection assembly () for individually detecting each signal beam on a corresponding detection element.

Multi-beam scanning electron beam device and methods of using the same

A method of operating a focused ion beam device having a gas field ion source is described. According to some embodiments, the method includes emitting an ion beam from a gas field ion source, providing an ion beam column ion beam energy in the ion beam column which is higher than the final beam energy, decelerating the ion beam for providing a final beam energy on impingement of the ion beam on the specimen of 1 keV to 4 keV, and imaging the specimen.

High resolution gas field ion column with reduced sample load

A charged particle beam device is provided, including: a charged particle beam source adapted to generate a charged particle beam on an axis; an optical aberration correction device and an objective lens device, which define a corrected beam aperture angle adjusted to reduce diffraction; and a charged particle beam tilting device; wherein the optical aberration correction device and the objective lens device are adapted to provide the charged particle beam with a beam aperture angle smaller than the corrected beam aperture angle; and wherein the charged particle beam tilting device is adapted to provide a beam tilt angle which is equal or less than the corrected beam aperture angle. Further, a method of operating a charged particle beam device is provided.

Charged particle beam device and a method of operating a charged particle beam device

It is provided a charged particle beam device for inspecting a specimen, comprising a charged particle beam source adapted to generate a primary charged particle beam; an objective lens device adapted to direct the primary charged particle beam onto the specimen; and a detector device comprising one or more charged particle detectors adapted to detect a secondary charged particle beam generated by the primary charged particle beam at the specimen and passing through the objective lens device, the secondary charged particle beam comprising a first group of secondary charged particles starting from the specimen with high starting angles and a second group of secondary charged particles starting from the specimen with low starting angles; wherein at least one of the charged particle detectors is adapted to detect depending on the starting angles one group of the first and the second groups of secondary charged particles.

Arrangement and method for the contrast improvement in a charged particle beam device for inspecting a specimen

An ion beam device is described. The ion beam device includes an ion beam source for generating an ion beam, the ion beam being emitted along a first axis, an aperture unit adapted to shape the ion beam, and an achromatic deflection unit adapted to deflect ions of the ion beam having a predetermined mass by a deflecting angle. The achromatic deflection unit includes: an electric field generating component for generating an electric field, and a magnetic field generating component for generating a magnetic field substantially perpendicular to the electric field. The device further includes a mass separation aperture adapted for blocking ions with a mass different from the predetermined mass and for allowing ions having the predetermined mass to trespass the mass separator, and an objective lens having a second optical axis, wherein the second optical axis is inclined with regard to the first axis.

Achromatic mass separator

A charged particle beam apparatus is provided, which comprises a charged particle beam column for generating a primary charged particle beam; a focusing assembly, such as a charged particle lens, e.g., an electrostatic lens, for focusing the primary charged particle beam on a specimen; a detector for detecting charged signal particles which are emerging from the specimen; and a deflector arrangement for deflecting the primary charged particle beam. The deflector arrangement is arranged downstream of the focusing assembly and is adapted for allowing the charged signal particles passing therethrough. The detector is laterally displaced with respect to the optical axis in a deflection direction defined by the post-focusing deflector arrangement.

Charged particle beam apparatus and method for operating a charged particle beam apparatus

A multifunction module for an electron beam column comprises upper and lower electrodes, and a central ring electrode. The upper and lower electrodes have multipoles and are capable of deflecting, or correcting an aberration of, an electron beam passing through the electrodes. A voltage can be applied to the central ring electrode independently of the voltages applied to the upper and lower electrodes to focus the electron beam on a substrate.

Multi-function module for an electron beam column

The present invention relates to a charged particle beam device () for inspecting or structuring a specimen () comprising a charged particle beam source () to generate a charged particle beam (), a focussing lens () to focus the charged particle beam () onto the specimen (), and an aperture system () for defining an aperture () for the charged particle beam (). The aperture system () includes a first member () to block a first portion () of the charged particle beam () between the charged particle beam source () and the focussing lens (), a second member () to block a second portion () of the charged particle beam () between the charged particle beam source () and the focussing lens (), first means () for moving the first member () to adjust the size of the blocked first portion () of the charged particle beam (), and second means () for moving the second member () independently from the first portion (). With such aperture system (), it is possible to freely adjust the size of the aperture () and align it to the optical axis () during operation.

Charged particle beam device with aperture

An electron beam column comprises a thermal field emission electron source to generate an electron beam, an electron beam blanker, a beam shaping module, and electron beam optics comprising a plurality of electron beam lenses. In one version, the optical parameters of the electron beam blanker, beam shaping module, and electron beam optics are set to achieve an acceptance semi-angle &#x3b2; of from about &#xbc; to about 3 mrads, where the acceptance semi-angle &#x3b2; is half the angle subtended by the electron beam at the writing plane. The beam-shaping module can also operate as a single lens using upper and lower projection lenses. A multifunction module for an electron beam column is also described.

Electron beam column for writing shaped electron beams

The invention provides electron multiple beam devices () for probing or structuring a non-transparent specimen () with primary electron beams () with an array of electron beam sources () to generate multiple primary electron beams (), an electron sensor () with electron sensor segments () to detect electrons of the primary electron beams () and at least one anode () to direct the primary electron beams () towards the electron sensor (). The electron sensor () serves to inspect the primary electron beams (), calibrate the positions of the primary electron beams () and possibly adjust final focus length () and currents of the primary electron beams before or after a probing or structuring the upper surface () of a non-transparent specimens (). Further, methods to inspect primary electron beams (), to adjust final focus lengths () and to calibrate the multiple electron beam device () are provided.

Growing community of inventors

Poing, Germany

Helmut Banzhof