Steag Rtp Systems Gmbh

Mattson Technology, Inc

Steag Ast

Helmut Aschner

Dieter Zernickel

Andreas Hauke

Ulrich Walk

Patrick Schmid

Karsten Weber

Helmut Merkle

The invention relates to a device and a method for the heat treatment of substrates, especially semiconductor wafers. The device comprises a reaction chamber with a compensation element. According to the invention the substrate can be inserted and withdrawn again more easily by the fact that the compensation element ( ) can be at least partly lowered and/or raised in the reaction chamber.

Method and apparatus device for the heat treatment of substrates

Air bearings support a rotating wafer carrying base in an RTP system. The base in proximity to the air bearing is protected from warping due to absorption of radiation from the hot wafer being treated. The most preferred embodiment splits the base into an inner disk carrying the wafer and an outer ring, where the inner ring which absorbs the most energy contacts and is supported at three points by the outer disk which is supported by the air bearing.

Gas driven rotating susceptor for rapid thermal processing (RTP) system

An apparatus, method, and system for Rapid Thermal Processing (RTP), whereby the object to be processed is rotated under the radiation sources of the RTP system by a gas jet system, is presented.

Rapid thermal processing (RTP) system with gas driven rotating substrate

A rapid thermal processing (RTP) chamber is disclosed, wherein a transparent plate and a body are sealed with a gas tight seal, and wherein the gas tight seal is activated by inflating an inflatable element.

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Beimerstetten, Germany

Helmut Aschner