Disco Corporation

Disco Corportion

Heidi Lan

Kentaro Odanaka

Wakana Onoe

Masatoshi Wakahara

Meiyu Piao

Karl Heinz Priewasser

Toshiyuki Sakai

Tetsukazu Sugiya

Meiya Piao

A wafer processing method in which a wafer including devices on a front surface side is processed. The method includes a wafer-with-protective-component forming step of forming the wafer with a protective component through sticking the protective component formed of a resin that softens by heat to the front surface side by pressing and heating the protective component, a thickness measurement step of measuring a thickness of the protective component in the wafer with the protective component, and a grinding step of holding the wafer with the protective component by a chuck table and grinding a back surface side of the wafer until a thickness of the wafer becomes an intended finished thickness. In the grinding step, the thickness of the protective component measured in the thickness measurement step is subtracted from a total thickness of the wafer with the protective component to calculate the thickness of the wafer.

Wafer processing method

A manufacturing method of a device chip includes a die bonding resin providing step of supplying a die bonding resin in a liquid state to a back surface side of a wafer with device chips formed on a front surface thereof and solidifying the die bonding resin, a water-soluble resin providing step of covering the die bonding resin with a water-soluble resin, a laser processing step of applying a laser beam from the back surface side of the wafer to remove the die bonding resin and the water-soluble resin, an etching step of etching an exposed portion on the back surface side of the wafer to divide the wafer, and a water-soluble resin removing step of supplying water on the back surface side of the wafer to remove the water-soluble resin.

Manufacturing method of device chip

A wafer processing method includes the following steps: forming, on a back side of a wafer including a device layer, a mask to be used in forming grooves in a substrate along streets from the back side of the wafer; applying plasma etching from the back side of the wafer through the mask to form the grooves in the substrate along the streets and to define chip regions surrounded by the grooves; immersing the wafer in water, to which ultrasonic vibrations are being applied, after the etching step, whereby the device layer is cracked or ruptured along outer peripheral edges of the chip regions; and bonding a tape to a front side of the wafer before performance of the water immersion step.

A wafer processing method for processing a wafer having a substrate and a device layer formed on a front side of the substrate includes forming a mask on a back side of the wafer, so as to form an etched groove along each street through a thickness of the substrate from the back side of the wafer, performing plasma etching from the back side of the wafer through the mask to the substrate after forming the mask, thereby forming the etched groove in the substrate along each street so that the etched groove has a depth equal to the thickness of the substrate, and applying a laser beam to the device layer along each street from the front side of the wafer before etching and mask forming, thereby forming a device layer dividing groove corresponding to the etched groove along each street.

A wafer processing method includes the following steps: forming, on a back side of a wafer including a device layer, a mask to be used in forming grooves in a substrate along streets from the back side of the wafer; applying plasma etching from the back side of the wafer through the mask to form the grooves in the substrate along the streets; ejecting high-pressure fluid against the back side of the wafer with the wafer mounted at its front side on a mounting surface to press the wafer at regions surrounded by the etched grooves; and bonding a tape to the front side of the wafer before performance of at least the pressing step.

A processing method of a wafer includes a cut groove forming step of carrying out cutting with a cutting blade along streets from the back surface of the wafer to form cut grooves, a wafer dividing step of irradiating the wafer with a laser beam along the cut grooves and dividing the wafer into individual chips after the cut groove forming step is carried out, and a die bonding layer disposing step of applying a liquid die bonding agent on the back surface of the wafer and curing it to form the chips on which die bonding layers are formed on the back surface. According to the processing method of the present invention, the occurrence of clogging in the cutting blade and generation of a burr or the like in the die bonding layers can be prevented.

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Tokyo, Japan

Heidi Lan