Intel Corporation

Heidi B Cao

Wang Yueh

Robert P Meagley

Manish Chandhok

Kevin O'Brien

Jeanette M Roberts

Robert L Bristol

Vijayakumar S Ramachandrarao

A semiconductor process technique to help reduce semiconductor process effects, such as undesired line edge roughness, insufficient lithographical resolution, and limited depth of focus problems associated with the removal of a photoresist layer. More particularly, embodiments of the invention use a photoacid generator (PAG) material in conjunction with a sacrificial light absorbing material (SLAM) to help reduce these and other undesired effects associated with the removal of photoresist in a semiconductor manufacturing process. Furthermore, embodiments of the invention allow a PAG to be applied in a semiconductor manufacturing process in an efficient manner, requiring fewer processing operations than typical prior art techniques.

Photoactive adhesion promoter in a slam

Photoactive adhesion promoter in a SLAM

A modified EUV photoresist and a method of making the resist. The modified resist includes an EUV photoresist and a LAM incorporated into the EUV photoresist.

Method of reducing sensitivity of EUV photoresists to out-of-band radiation and EUV photoresists formed according to the method

A series structure of a chemically amplified negative tone photoresist that is not based on cross-linking chemistry is herein described. The photoresist may comprise: a first aromatic structure copolymerized with a cycloolefin, wherein the cycloolefin is functionalized with a di-ol. The photoresist may also include a photo acid generator (PAG). When at least a portion of the negative tone photoresist is exposed to light (EUV or UV radiation), the PAG releases an acid, which reacts with the functionalized di-ol to rearrange into a ketone or aldehyde. Then new ketone or aldehyde is less soluble in developer solution, resulting in a negative tone photoresist.

Low outgassing and non-crosslinking series of polymers for EUV negative tone photoresists

Chemically amplified photoresists with reduced outgassing or no outgassing may be used in a vacuum environment of a lithography tool, such as an extreme ultraviolet lithography tool. A chemically amplified photoresist has a photoacid generator molecule. When the photoacid generator is irradiated, an acid is generated. The acid reacts with a protecting group in the photoresist to form an open-ring structure with reduced outgassing or no outgassing.

Photoresists with reduced outgassing for extreme ultraviolet lithography

Electric fields may be advantageously used in various steps of photolithographic processes. For example, prior to the pre-exposure bake, photoresists that have been spun-on the wafer may be exposed to an electric field to orient aggregates or other components within the unexposed photoresist. By aligning these aggregates or other components with the electric field, line edge roughness may be reduced, for example in connection with 193 nanometer photoresist. Likewise, during exposure, electric fields may be applied through uniquely situated electrodes or using a radio frequency coil. In addition, electric fields may be applied at virtually any point in the photolithography process by depositing a conductive electrode, which is subsequently removed during development. Finally, electric fields may be applied during the developing process to improve line edge roughness.

Enhancing photoresist performance using electric fields

Numerous embodiments of a method to prevent outgassing from a low activation energy photoresist are described. In one embodiment of the present invention, a photoresist material is dispensed over a substrate to form a photoresist layer. The photoresist layer includes branched polymers coupled with acetal or ketal linkages. An exposed portion of the photoresist layer is exposed to a radiation treatment to cleave the acetal or ketal linkages and separate the branched polymers. The photoresist layer is baked at a temperature below about 100&#xb0; C., and the separated branched polymers are too large to outgass from the photoresist layer.

Non-outgassing low activation energy resist

By using a branched long chained chain scission polymer as a photoresist for EUV and 157 nanometer applications, a relatively higher molecular weight polymer with good mechanical properties may be achieved. In addition, by using chain scission technology, line edge roughness and resolution may be improved at the same time.

Enabling chain scission of branched photoresist

A compound including a polymeric chain, and an acid labile group attached to the polymeric chain at an anhydride linkage is disclosed. Compositions including the compound, and methods of using the compositions are also disclosed.

Resist compounds including acid labile groups attached to polymeric chains at anhydride linkages

In one embodiment, a photoactive compound may be attached to a polymer backbone. This embodiment may be more resistant to the generation of reactive outgassing components and may exhibit better contrast.

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Portland, OR, United States of America

Heidi B Cao