Stats Chippac Pte. Ltd.

Jcet Semiconductor (shaoxing) Co., Ltd.

Stats Chippac Ptc. Ltd.

HeeJo Chi

NamJu Cho

HanGil Shin

Zigmund Ramirez Camacho

KyungMoon Kim

Sheila Marie L Alvarez

YoungChul Kim

HyungMin Lee

Bartholomew Liao Chung Foh

YeongIm Park

Kyung Moon Kim

Dao Nguyen Phu Cuong

Pandi Chelvam Marimuthu

Lan H Hoang

JaeHak Yee

Steve Anderson

KooHong Lee

Il Kwon Shim

HunTeak Lee

HeeSoo Lee

Yaojian Lin

Reza A Pagaila

Ki Youn Jang

Jun Mo Koo

Junwoo Myung

Soo Jung Park

ChanHoon Ko

JunMo Koo

Bartholomew Liao

JunWoo Myung

Yeonglm Park

Seng Guan Chow

Heap Hoe Kuan

Rui Huang

Soo-San Park

In Sang Yoon

Hun Teak Lee

DongSam Park

Taewoo Lee

HyungSang Park

A Leam Choi

Jae Han Chung

See Chian Lim

Chan Hoon Ko

YeoChan Ko

KeoChang Lee

SooSan Park

KeonTaek Kang

Hyunll Bae

Kelvin Dao

KyuSang Kim

Omin Kwon

A semiconductor device has an interposer mounted over a carrier. The interposer includes TSV formed either prior to or after mounting to the carrier. An opening is formed in the interposer. The interposer can have two-level stepped portions with a first vertical conduction path through a first stepped portion and second vertical conduction path through a second stepped portion. A first and second semiconductor die are mounted over the interposer. The second die is disposed within the opening of the interposer. A discrete semiconductor component can be mounted over the interposer. A conductive via can be formed through the second die or encapsulant. An encapsulant is deposited over the first and second die and interposer. A portion of the interposer can be removed to that the encapsulant forms around a side of the semiconductor device. An interconnect structure is formed over the interposer and second die.

Semiconductor device and method of forming interposer with opening to contain semiconductor die

A semiconductor device has a leadframe with a plurality of bodies extending from the base plate. A first semiconductor die is mounted to the base plate of the leadframe between the bodies. An encapsulant is deposited over the first semiconductor die and base plate and around the bodies of the leadframe. A portion of the encapsulant over the bodies of the leadframe is removed to form first openings in the encapsulant that expose the bodies. An interconnect structure is formed over the encapsulant and extending into the first openings to the bodies of the leadframe. The leadframe and bodies are removed to form second openings in the encapsulant corresponding to space previously occupied by the bodies to expose the interconnect structure. A second semiconductor die is mounted over the first semiconductor die with bumps extending into the second openings of the encapsulant to electrically connect to the interconnect structure.

Semiconductor device and method of using leadframe bodies to form openings through encapsulant for vertical interconnect of semiconductor die

A semiconductor device has a first semiconductor die stacked over a second semiconductor die which is mounted to a temporary carrier. A plurality of bumps is formed over an active surface of the first semiconductor die around a perimeter of the second semiconductor die. An encapsulant is deposited over the first and second semiconductor die and carrier. A plurality of conductive vias is formed through the encapsulant around the first and second semiconductor die. A portion of the encapsulant and a portion of a back surface of the first and second semiconductor die is removed. An interconnect structure is formed over the encapsulant and the back surface of the first or second semiconductor die. The interconnect structure is electrically connected to the conductive vias. The carrier is removed. A heat sink or shielding layer can be formed over the encapsulant and first semiconductor die.

Semiconductor device and method of forming ultra thin multi-die face-to-face WLCSP

A semiconductor device has a plurality of semiconductor die. A substrate is provided with bumps disposed over the substrate. A first prefabricated insulating film is disposed between the semiconductor die and substrate. An interconnect structure is formed over the semiconductor die and first prefabricated insulating film. The bumps include a copper core encapsulated within copper plating. The first prefabricated insulating film includes glass cloth, glass fiber, or glass fillers. The substrate includes a conductive layer formed in the substrate and coupled to the bumps. The semiconductor die is disposed between the bumps of the substrate. The bumps and the semiconductor die are embedded within the first prefabricated insulating film. A portion of the first prefabricated insulating film is removed to expose the bumps. The bumps electrically connect the substrate to the interconnect structure.

Semiconductor device and method of forming 3D dual side die embedded build-up semiconductor package

A semiconductor device has an interposer frame mounted over a carrier. A semiconductor die has an active surface and bumps formed over the active surface. The semiconductor die can be mounted within a die opening of the interposer frame or over the interposer frame. Stacked semiconductor die can also be mounted within the die opening of the interposer frame or over the interposer frame. Bond wires or bumps are formed between the semiconductor die and interposer frame. An encapsulant is deposited over the interposer frame and semiconductor die. An interconnect structure is formed over the encapsulant and bumps of the first semiconductor die. An electronic component, such as a discrete passive device, semiconductor die, or stacked semiconductor die, is mounted over the semiconductor die and interposer frame. The electronic component has an I/O count less than an I/O count of the semiconductor die.

Semiconductor device and method of forming interposer frame electrically connected to embedded semiconductor die

An integrated circuit packaging system and method of manufacture thereof including: providing a substrate; forming contact pads on top of the substrate; forming a protection layer on top of the contact pads and the substrate; exposing the contact pads from the protection layer; printing under bump metallization (UBM) layers over the exposed contact pads extended over the protection layer with conductive inks; and forming bumps on top of the under bump metallization layers. It also including: printing an adhesion layer using conductive ink, wherein the adhesion layer comprises interconnected adhesion layer pads; forming additional under bump metallization (UBM) layers and bumps on top of the adhesion layer pads utilizing an electro-deposition process; and removing connections among the interconnected adhesion layer pads.

Integrated circuit packaging system with under bump metallization and method of manufacture thereof

Methods of forming conductive and insulating layers for semiconductor devices and packages. Substrate is provided with integrated circuit device and interconnect structure mounted thereon, the interconnect structure adjacent the integrated circuit device. The integrated circuit device and portions of the interconnect structure can be covered with an encapsulation exposing a portion of the interconnect structure. Conductive material is formed over the exposed portion of the interconnect structure by a depositing process followed by a heating process to alter the chemical properties of the conductive material. Optionally, a dispersing process may be incorporated.

Methods of forming conductive and insulating layers

A system and method of manufacture of an integrated circuit packaging system includes: a base substrate, the base substrate includes a base terminal; an integrated circuit device on the base substrate; a bottom conductive joint on the base terminal; a conductive ball on the bottom conductive joint, the conductive ball includes a core body; and an interposer over the conductive ball.

Integrated circuit packaging system with interposer support structure mechanism and method of manufacture thereof

A semiconductor device has a plurality of semiconductor die or components mounted over a carrier. A leadframe is mounted over the carrier between the semiconductor die. The leadframe has a plate and bodies extending from the plate. The bodies of the leadframe are disposed around a perimeter of the semiconductor die. An encapsulant is deposited over the carrier, leadframe, and semiconductor die. A plurality of conductive vias is formed through the encapsulant and electrically connected to the bodies of the leadframe and contact pads on the semiconductor die. An interconnect structure is formed over the encapsulant and electrically connected to the conductive vias. A first channel is formed through the interconnect structure, encapsulant, leadframe, and partially through the carrier. The carrier is removed to singulate the semiconductor die. A second channel is formed through the plate of the leadframe to physically separate the bodies of the leadframe.

Semiconductor device and method of forming vertical interconnect in FO-WLCSP using leadframe disposed between semiconductor die

An integrated circuit packaging system and method of manufacture thereof includes: a base substrate having a bottom pad; an integrated circuit device mounted on the base substrate; an interposer having a package interconnect mounted on the base substrate, the package interconnect includes an underside base portion having an irregular surface characteristic of a coining process; and an encapsulation between the interposer and the base substrate.

Integrated circuit packaging system with joint assembly and method of manufacture thereof

A semiconductor device has a plurality of semiconductor die disposed over a carrier. An electrical interconnect, such as a stud bump, is formed over the semiconductor die. The stud bumps are trimmed to a uniform height. A substrate includes a bump over the substrate. The electrical interconnect of the semiconductor die is bonded to the bumps of the substrate while the semiconductor die is disposed over the carrier. An underfill material is deposited between the semiconductor die and substrate. Alternatively, an encapsulant is deposited over the semiconductor die and substrate using a chase mold. The bonding of stud bumps of the semiconductor die to bumps of the substrate is performed using gang reflow or thermocompression while the semiconductor die are in reconstituted wafer form and attached to the carrier to provide a high throughput of the flipchip type interconnect to the substrate.

Semiconductor device and method of bonding semiconductor die to substrate in reconstituted wafer form

A system and method of manufacture of an integrated circuit packaging system includes: a photoimagable dielectric layer having a trace opening for exposing the carrier; a trace within the trace opening; an inner solder resist layer directly on the photoimagable dielectric layer and the trace, the inner solder resist layer having a bond pad opening for exposing the trace; an integrated circuit over the inner solder resist layer, the integrated circuit electrically connected to the trace through the bond pad opening; an encapsulation directly on the integrated circuit and the inner solder resist layer; and an external interconnect electrically coupled to the trace and the integrated circuit.

Integrated circuit packaging system with photoimagable dielectric-defined trace and method of manufacture thereof

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Kyoungki-do, South Korea

HeeJo Chi