Samsung Electronics Co., Ltd.

Hee-joo Choi

Joon-hee Lee

Dong-Jun Kim

Youn-Cheul Kim

Kae-Won Ha

Joon-Hee Lee

Seung-Hee Lee

Byoung-sul Kim

Jung-Kuk Lee

In-su Choi

Il-guy Jung

Kae-won Ha

Provided is a test system conducting a parallel bit test. The test system, conducting a parallel bit test on a plurality of memory modules mounted on a socket, comprises a plurality of counters and a comparator. Each of the counters counts the number of data output signals in the same logic state, among the data output signals outputted from each memory of the memory modules, and outputs a count signal. The comparator compares the count signal outputted from each of the counters and outputs a comparison signal corresponding to a defect of the memory modules. According to the test system, defects in a memory module can be accurately detected and a possibility of an error in the detection can be reduced when a plurality of memory modules are tested, as compared to conventional test systems.

Test system for conducting parallel bit test

A memory module and a memory system are provided. The memory module includes a first circuit board on which at least one memory chip is mounted, a second circuit board on which at least one memory chip is mounted, and a flexible coupler electrically connecting the first circuit board to the second circuit board. The memory module is bendable and is configured to extend around a memory controller. The memory chips are electrically coupled with the memory controller via a respective plurality of signal lines. The bendable memory module is configured to be bent around the memory controller such that respective lengths of the signal lines are equal.

Memory module and memory system having the same

Each memory chip of a memory module tests a total of N data bits from X memory blocks for efficient testing and outputs N/X data bits from one of the memory blocks. A memory module includes a plurality of memory chips and a plurality of comparison units. Each comparison unit is disposed within a respective memory chip for testing a plurality of data bits from a plurality of memory blocks. In addition, each comparison unit outputs data bits from one of the memory blocks within the respective memory chip.

Memory module with parallel testing

A memory system for controlling interface timing in a memory module and a related timing control method are disclosed. The memory system comprises a memory module having a memory module controller configured to control interface timing of a plurality of memory devices in accordance with memory information and memory signal information. The memory information includes memory initialization information and interface timing information for the plurality of memory devices.

System controlling interface timing in memory module and related method

A voltage level shifter for a semiconductor memory device includes a VPP level control circuit that is configured to detect a VPP voltage and to change the VPP voltage in response to a package burn-in mode signal and a test mode signal independent of at least one direct current voltage generated in response to the package burn-in mode signal.

Semiconductor memory devices incorporating voltage level shifters for controlling a VPP voltage level independently and methods of operating the same

Each memory chip of a memory module tests a total of N data bits from X memory blocks for efficient testing and outputs N/X test data bits from one of the memory blocks. A memory module includes a plurality of memory chips and a plurality of comparison units. Each comparison unit is disposed within a respective memory chip for testing a plurality of test data bits from a plurality of memory blocks. In addition, each comparison unit outputs test data bits from one of the memory blocks within the respective memory chip.

Growing community of inventors

Suwon-si, South Korea

Hee-joo Choi