Samsung Electronics Co., Ltd.

Hee-jeon Yang

In-ho Choi

Vladimir Volynets

Xinglong Chen

Sang-jin An

Sung-keun Cho

Sangheon Lee

Sang-Heon Lee

Gon-jun Kim

Sang-jean Jeon

Go-jun Kim

Jong-rok Park

Sung-yeup Sa

Guen-suk Lee

An etching method using plasma includes generating plasma by supplying process gases to at least one remote plasma source (RPS) and applying power to the at least one RPS, and etching an etching object by supplying water (HO) and the plasma to a process chamber.

Etching method using plasma, and method of fabricating semiconductor device including the etching method

An apparatus to treat a substrate includes a processing chamber including a reaction space where a substrate to be treated is placed and a plasma is formed, a ferrite core having a plurality of poles disposed outside the reaction space and a connector facing the reaction space across the plurality of poles and connecting the plurality of the poles each other, a coil winding around the plurality of poles, and an electric power unit supplying electric power to the coil.

Apparatus to treat a substrate

Growing community of inventors

Suwon-si, South Korea

Hee-jeon Yang