Taiwan Semiconductor Manufacturing Comp. Ltd.

He Hui Peng

Liang-Guang Chen

Shich-Chang Suen

Chi-Ming Yang

Chi-Jen Liu

Li-Chieh Wu

James Jeng-Jyi Hwang

Yung-Chung Chen

Jiann Lih Wu

Chi-Ming Tsai

Fu-Ming Huang

Han-Hsin Kuo

Yung-Yao Lee

Shwang-Ming Jeng

Yen-Di Tsen

Wne-Pin Peng

A method for polishing a semiconductor substrate includes the following operations. A semiconductor substrate is received. An abrasive slurry having a first temperature is dispensed to a polishing surface of a polishing pad. The semiconductor substrate is polished. The abrasive slurry have a second temperature is dispensed to the polishing surface of the polishing pad during the polishing of the semiconductor substrate. The second temperature is different from the first temperature.

Method for polishing semiconductor substrate

The present disclosure provides a method for forming an integrated circuit (IC) structure. The method includes providing a metal gate (MG), an etch stop layer (ESL) formed on the MG, and a dielectric layer formed on the ESL. The method further includes etching the ESL and the dielectric layer to form a trench. A surface of the MG exposed in the trench is oxidized to form a first oxide layer on the MG. The method further includes removing the first oxide layer using a HPOsolution.

Method for metal gate surface clean

An apparatus for CMP includes a wafer carrier retaining a semiconductor wafer during a polishing operation, a slurry dispenser dispensing an abrasive slurry, and a slurry temperature control device coupled to the shiny dispenser and configured to control a temperature of the abrasive slurry. The slurry temperature control device includes a heat transferring portion surrounding a portion of the slurry dispenser, and a thermos-electric (TE) chip coupled to the heat transferring portion and configured to control the temperature of the abrasive slurry.

Device and methods for chemical mechanical polishing

A wafer polishing head is provided. The wafer polishing head includes a carrier head, a plurality of piezoelectric actuators disposed on the carrier head, and a membrane disposed over the plurality of piezoelectric actuators. The plurality of piezoelectric actuators is configured to provide mechanical forces on the membrane and generate an electrical charge when receiving counterforces of the mechanical forces through the membrane. A wafer polishing system and a method for polishing a substrate using the same are also provided.

Wafer polishing head, system thereof, and method using the same

An apparatus for CMP includes a platen, a wafer carrier retaining a semiconductor wafer during a polishing operation, a dresser configured to recondition a polishing pad disposed on the platen during the polishing operation, and a vibration-monitoring system configured to detect vibrations during the polishing operation. The vibration-monitoring system includes a first vibration sensor configured to generate a plurality of first vibration signals. An end point is triggered to the polishing when a change between the plurality of vibration signals reaches a value.

Apparatus and methods for chemical mechanical polishing

An apparatus for CMP includes a wafer carrier retaining a semiconductor wafer during a polishing operation, a slurry dispenser dispensing an abrasive slurry, and a temperature control system monitoring and controlling a temperature variation during the polishing operation. The temperature control system includes a temperature sensor detecting a temperature during the polishing operation and providing a signal corresponding to the temperature, a temperature controller coupled to the temperature sensor and receiving the signal from the temperature sensor, and a cooling device coupled to the temperature controller and providing a coolant to the apparatus for CMP.

A method for cleaning a brush includes inducing a static charge on a surface of a first plate, wherein the first plate comprises at least one of silicon nitride (SiN) or silicon oxide (SiO), wherein a, b, x and y are integers. The method further includes rotating the brush in contact with the surface of the first plate.

Brush cleaning method

Method for cleaning metal gate surface

A brush cleaning system comprising: a plate comprising at least one of silicon nitride (SiN) or silicon oxide (SiO), wherein the plate has a static charge on a surface thereof; and a machine configured to rotate a brush in contact with the static charged surface of the plate.

Brush cleaning system

A method includes forming an etch stop layer over and contacting a gate electrode of a transistor, forming a sacrificial layer over the etch stop layer, and etching the sacrificial layer, the etch stop layer, and an inter-layer dielectric layer to form an opening. The opening is then filled with a metallic material. The sacrificial layer and excess portions of the metallic material over a top surface of the etch stop layer are removed using a removal step including a CMP process. The remaining portion of the metallic material forms a contact plug.

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Changhua, Taiwan

He Hui Peng