Tokyo Electron Limited

Toyo Tanso Co., Ltd.

Hayashi Otsuki

Tsukasa Matsuda

Kyoko Ikeda

Kunihiro Tada

Kimihiro Matsuse

Satoru Nogami

Yutaka Miura

The present invention provides a particle measuring system which is provided in a processing systemwhich generates an atmosphere obtained by exhausting air or a gas in a processing chamberby a vacuum pumpand applies a process concerning semiconductor manufacture to a wafer W in the atmosphere, attached to an exhaust pipewhich connects an exhaust openingof the processing chamberwith the vacuum pump, and measures the number of the particles in the exhaust gas, and a measuring method thereof, the system and method providing a processing system and a cleaning method which terminate etching process by determining an end point based on the number of the particles in the exhaust gas and perform cleaning of unnecessary films.

Particle-measuring system and particle-measuring method

Film forming method

Film formation processing apparatus and method for determining an end-point of a cleaning process

A processing apparatus of the present invention has a mounted chamber holding a semiconductor wafer and having members for work-processing the substrate under any of heating, plasma and process gas or a combination of them, in which a film of AlOand YOis formed on an inner wall surface of the chamber and on those exposed surface of the members within the chamber and has a high-corrosion resistance and insulating property and, when the process gas is introduced onto a processing surface of a semiconductor wafer and diffused into it, any product is less liable to be deposited on a plasma generation area and on those members held within the chamber.

Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film

A process gas line () for carrying WFgas for nucleation, a process gas line () for carrying WFgas for film deposition after nucleation are joined at a single joint () to a carrier gas line (). A gas line () is connected to the joint () to carry a mixed gas of the carrier gas and WFgas to a processing chamber defined by a processing vessel. Sections of the carrier gas line () and the gas line () extending on the opposite sides of the joint () extend along a straight line, and the process gas lines () are perpendicular to the gas line ().

Gas processing apparatus, gas processing method and integrated valve unit for gas processing apparatus

A method of forming a refractory metal film doped with III or V group elements. The first process gas is supplied from a first gas source through a first gas introducing member to and through a gas supply mechanism toward a substrate within a processing vessel. The second process gas is supplied from a second gas source through a second gas introducing member to and through the gas supply mechanism toward the substrate within the processing vessel. The processing vessel is purged by evacuating the processing vessel by an evacuating mechanism, while supplying the inert gas from a third source through a third gas introducing member to and through the gas supply mechanism into the processing vessel. The supplying the first process gas and the supplying the second process gas are repeated with the supplying the purging gas being carried out between supplying the first and second gases performed so that residual gas present in the processing vessel after performing the supplying of the first and second process gases is reduced to a level of 1 to 30% based on the entire capacity of the processing vessel.

Method of forming a metal film for electrode

The present invention provides a particle measuring system which is provided in a processing system that generates an atmosphere obtained by exhausting air or a gas in a processing chamber by a vacuum pump and applies a process concerning semiconductor manufacture to a wafer W in the atmosphere, attached to an exhaust pipe which connects an exhaust opening of the processing chamber with the vacuum pump, and measures the number of the particles in the exhaust gas, and a measuring method thereof, the system and method providing a processing system and a cleaning method which terminate etching process by determining an end point based on the number of the particles in the exhaust gas and perform cleaning of unnecessary films.

The present invention provides a particle measuring system which is provided in a processing systemwhich generates an atmosphere obtained by exhausting air or a gas in a processing chamberby a vacuum pumpand applies a process concerning semiconductor manufacture to a wafer W in the atmosphere, attached to an exhaust pipewhich connects an exhaust openingof the processing chamberwith the vacuum pumpand measures the number of the particles in the exhaust gas, and a measuring method thereof, the system and method providing a processing system and a cleaning method which terminate etching process by determining an end point based on the number of the particles in the exhaust gas and perform cleaning of unnecessary films.

A Ti film is formed by CVD in holes formed in an insulating film formed on a Si substrate or on a Si film formed on a Si substrate by a method according to the present invenitioin. The method includes the steps of loading a Si substrate into a film forming chamber; evacuating the chamber at a predetermined vacuum; supplying TiClgas, Hgas, Ar gas and SiHgas into the film forming chamber; and producing a plasma in the film forming chamber to deposit a Ti film in the holes formed in the insulating film. The Si substrate is heated at 500&#xb0; C. or below during the deposition of the Ti film. The flow rate of the SiHgas is from 30 to 70% of the flow rate of the TiClgas. This method enables formation of a Ti film on a Si base at positions of holes in an insulating layer, with a good morphology of the interface between the Si base and the Ti film and with a good step coverage.

Method of forming titanium film by CVD

A highly corrosion-resistant SiC material is formed on a base body by a CVD process. The SiC material contains &#x3b2;-SiC crystals so oriented that the ratio of the sum of peak intensities of x-ray diffraction for (220) and (311) planes of the &#x3b2;-Sic csystals to the sum of peak intensities of x-ray diffraction for (111), (200), (220), (311) and (222) planes Of the &#x3b2;-SiC crystals is 0.15 or above. The SiC material may contain both &#x3b2;-SiC crystals and &#x3b1;-SiC crystals of 6H structure. A base body with a SiC material by a CVD process is used as an internal component member of a semiconductor device fabricating system.

SiC material, semiconductor device fabricating system and SiC material forming method

A TiSiN film is used as a barrier metal layer for a semiconductor device to prevent the diffusion of Cu. The TiSiN film is formed by a plasma CVD process or a thermal CVD process. TiClgas, a silicon hydride gas and NHgas are used as source gases for forming the TiSiN film by the thermal CVD process. TiClgas, a silicon hydride gas, Hgas and Ngas are used as source gases for forming a TiSiN film by the plasma CVD process.

TiSiN film forming method, diffusion barrier TiSiN film, semiconductor device, method of fabricating the same and TiSiN film forming system

A highly corrosion-resistant SiC material is formed on a base body by a CVD process. The SiC material contains &#x3b2;-SiC crystals so oriented that the ratio of the sum of peak intensities of x-ray diffraction for (220) and (311) planes of the &#x3b2;-SiC csystals to the sum of peak intensities of x-ray diffraction for (111), (200), (220), (311) and (222) planes of the &#x3b2;-Sic crystals is 0.15 or above. The SiC material may contain both &#x3b2;-SiC crystals and &#x3b1;-SiC crystals of 6H structure. A base body with a SiC material by a CVD process is used as an internal component member of a semiconductor device fabricating system.

SiC material, semiconductor processing equipment and method of preparing SiC material therefor

Method for forming TiSiN film, diffusion preventive film comprising TiSiN film, semiconductor device and its production method, and apparatus for forming TiSiN film

Growing community of inventors

Nakakoma-gun, Japan

Hayashi Otsuki