Ebara Corporation

Haruko Ono

Ichiro Katakabe

Sachiko Takeda

Yuki Inoue

Xinming Wang

Fumitoshi Oikawa

Teruaki Hombo

Shinji Kajita

A substrate is cleaned by performing a scrubbing process on a surface to be cleaned of the rotating substrate with a roll-shaped cleaning member while holding an outer circumferential surface of the roll-shaped cleaning member in contact with the surface to be cleaned of the substrate across a predetermined contact width. During at least a part of the scrubbing process, the roll-shaped cleaning member is placed at an offset cleaning position where the central axis of the roll-shaped cleaning member is spaced from the central axis of the substrate by a distance which is 0.14 to 0.5 times the contact width. The surface to be cleaned of the substrate is scrubbed with more uniform cleaning intensity while taking into account the cleaning intensity at each position (area) along the radial direction of the surface to be cleaned of the substrate.

Method and apparatus for cleaning substrate

An apparatus for processing a substrate through successive steps including spin-drying the substrate with a single processing facility while preventing the substrate from being contaminated by a substrate processing liquid, etc. The apparatus for processing a substrate includes a substrate holder for holding and rotating a substrate, a scattering prevention cup for circumferentially surrounding the substrate held by the substrate holder to prevent a substrate processing liquid supplied to the substrate from being scattered around, and a scattering prevention cup cleaner for cleaning an inner wall surface of the scattering prevention cup.

Apparatus for and method of processing substrate

A substrate processing enables etching of a barrier metal film at around room temperature without application of a mechanical load and without excessive etching of a necessary portion of copper. The substrate processing flattens a copper film and a barrier metal film, both exposed on a surface of a substrate, by using an etching liquid capable of adjusting the etching rate ratio between the copper film and the barrier metal film.

Substrate processing method

Growing community of inventors

Tokyo, Japan

Haruko Ono