Ebara Corporation

Haruko Ohno

Akira Fukunaga

Ichiro Katakabe

Sachiko Kihara

Shinya Morisawa

There is provided a method and apparatus for etching a ruthenium film which can sufficiently etch away a ruthenium film formed on or adhering to the peripheral region, especially a no-device-formed region, backside or other portions of a substrate. The method comprises etching a ruthenium film formed on a substrate with a chemical liquid having a pH of not less than 12 and an oxidation-reduction potential of not less than 300 mVvsSHE.

Method and apparatus for etching ruthenium films

An apparatus continuously supplies an acid solution to a central portion of a surface of a substrate while the substrate is rotating, and also supplies an oxidizing agent solution continuously or intermittently to a periphery of the substrate. In addition, the apparatus supplies an oxidizing agent solution and an acid solution either simultaneously or alternately to a reverse side of the substrate.

Method of and apparatus for cleaning substrate

An acid solution is continuously supplied to a central portion of a surface of a substrate while the substrate is rotating, and an oxidizing agent solution is continuously or intermittently supplied to a periphery of the substrate. In addition, an oxidizing agent solution and an acid solution are simultaneously or alternately supplied to a reverse side of the substrate.

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Tokyo, Japan

Haruko Ohno