Kabushiki Kaisha Toshiba

Dupont Air Products Nanomaterials, LLC

Other

Infineon Technologies Ag

Air Products and Chemicals, Inc.

Ebara Corporation

Ekc Technology Inc.

Haruki Nojo

Rempei Nakata

Ravikumar Ramachandran

Nobuo Hayasaka

Masako Kodera

Akitoshi Yoshida

Pascal Berar

Robert J Small

Jeremy K Stephens

Ronald J Schutz

Kiyotaka Kawashima

Sumit Pandey

Kenichi Orui

Hirofumi Kashihara

Steve Masami Aragaki

Atsushi Hayashida

Yoshibumi Suzuki

To provide a polishing slurry composition which effectively reduces the occurrence of scratches, and a method of polishing which reduces the occurrence of scratches while realizing an economical polishing step. The aforementioned object is attained by using a polishing slurry composition for polishing a semiconductor substrate containing a metal oxide particle, at least one water-soluble organic polymer and water, said slurry composition characterized in that, when a test substrate having a metal film, a shallow trench isolation film or dielectric film is polished by varying a rate of a polishing pad equipped in a polishing apparatus under a constant polishing pressure to achieve a maximum polishing rate.

Chemical mechanical polishing composition and process

A method of polishing a semiconductor substrate surface having at least one ruthenium feature thereon and at least one dielectric material, wherein the substrate is contacted with an aqueous composition containing from about 0.0005 to about 1 moles/kilogram of periodic acid, from about 0.2% to about 6% % by weight of silica abrasive having an average particle size of about 50 nm or less, and an amine in an amount sufficient to adjust the pH of the composition to between about 2.5 and 7. The removal selectivity of the ruthenium to a. low-K dielectric is greater than 20:1. Advantageously, the substrate further has a tantalum-containing compound, and the polishing rate of the tantalum-containing compound is about the same as the polishing rate of the ruthenium, so that the polishing process is a one-step process.

Periodic acid compositions for polishing ruthenium/low K substrates

The present invention relates generally to compositions and associated methods for chemical-mechanical polishing of substrate surfaces having at least one feature thereon comprising tungsten and at least one feature thereon comprising a dielectric material. The compositions and associated methods of the invention result in similar removal rates of both the tungsten and the dielectric material. Compositions used in the methods of the present invention typically have a pH from about 1.5 to about 3.5 and comprise periodic acid and colloidal silica.

Polishing method to reduce dishing of tungsten on a dielectric

A problem to be solved is to provide a slurry that is capable of flattening an uneven film on a substrate with good precision, and that has good stability, not separating into two layers, solidifying through flocculated settling or undergoing changes in viscosity. This problem is solved by adding poly ammonium acrylates having different degrees of neutralization to one another as surfactants to a cerium oxide slurry containing cerium oxide particles, and suitably adjusting the total amount of polyacrylates added.

Cerium oxide slurry, and method of manufacturing substrate

An aqueous based ceria slurry system and method for chemical mechanical polishing of semiconductor wafers, the slurry comprising less than 5 wt % abrasive cerium oxide particles and up to about the critical micelle concentration of a cationic surfactant, absent other abrasives, in a neutral to alkaline pH solution is disclosed. Also disclosed is slurry comprising a blend of surfactants including a pre-existing amount of anionic surfactant and an added amount of cationic and/or non-ionic surfactant.

Ceria slurry solution for improved defect control of silicon dioxide chemical-mechanical polishing

A polishing method including applying a polishing agent containing polishing grains and a surfactant onto an oxide film, which is formed on a substrate having a depressed portion and a protruding portion, wherein the surfactant is an organic compound including at least one hydrophilic group selected from the group consisting of COOH, COOM , wherein M represents an atom or a functional group which can form a salt when substituted for a hydrogen atom of a carboxyl group, SO H and SO M , wherein M represents an atom or a functional group which can form a salt when substituted for a hydrogen atom of a sulfo group; and polishing the film until the film is flattened without the occurrence of dishing.

Polishing method and polisher used in the method

An aqueous slurry-less composition for chemical-mechanical-polishing of a silicon dioxide workpiece comprising: a cationic surfactant that is soluble and ionized at neutral to alkaline pH conditions, in which the cationic surfactant is present in an aqueous slurry-less composition in an amount less than its critical micelle concentration.

Compositions for and method of reducing/eliminating scratches and defects in silicon dioxide during CMP process

According to the present invention, there is provided a polishing method having the steps of forming a film to be polished, having a depressed portion and a protruding portion on a surface of a substrate, and polishing the film to be polished by relatively moving the substrate and a polishing table, while pressing the substrate having the film to be polished, onto a polishing cloth of the polishing table and supplying a polishing solution containing polishing grains, between the film to be polished and the polishing cloth, wherein an organic compound having a molecular weight of 100 or more, and containing at least one hydrophilic group selected from the group consisting of COOM,(M represents an atom or a functional group which can form a salt when substituted with a hydrogen atom of a carboxyl group), SO,H (sulfo group) and SO,M,(M,represents an atom or a functional group which can form a salt when substituted with a hydrogen atom of a carboxyl group) is added to the polishing solution. Further, there are provided a polishing solution in which polishing grains are dispersed into a dispersion medium, and a polishing agent containing an organic compound having a molecular weight of 100 or more and containing at least one hydrophilic group selected from the group consisting of COOM,(M represents an atom or a functional group which can form a salt when substituted with a hydrogen atom of a carboxyl group), SO,H (sulfo group) and SO,M,(M,represents an atom or a functional group which can form a salt when substituted with a hydrogen atom of a carboxyl group) added to the polishing solution.

The first pipe 34 delivers the first solution 21 containing polishing particles. The second pipe 37, containing a liquid mass flow unit 36, delivers the second solution containing a chemical substance. The outlet port of the first pipe and the outlet port of the second pipe are connected to one end portion of the third pipe 31. The third pipe has the other end portion with an inner diameter almost equal to the inner diameter of its one end portion. The first and second solutions introduced into the third pipe are mixed in the third pipe to generate a polishing liquid. The generated polishing liquid is supplied from the other end portion of the third pipe onto a polishing pad 13 to polish a semiconductor wafer 16.

Growing community of inventors

Kanagawa, Japan

Haruki Nojo