Canon Kabushiki Kaisha

Hitachi-high-technologies Corporation

Hitachi, Ltd.

Haruhito Ono

Masahiko Okunuki

Tetsuya Kaneko

Hidetoshi Suzuki

Ichiro Nomura

Kenji Tamamori

Toshihiko Takeda

Shinan Wang

Takayuki Yagi

Yasuhiro Shimada

Masato Muraki

Yoshikazu Banno

Taiko Motoi

Toshiaki Aiba

Takeo Tsukamoto

Yoshinori Nakayama

Kenichi Nagae

Shinya Mishina

Atsunori Terasaki

Hiroshi Maehara

Nobuo Watanabe

Nobuki Yoshimatsu

Akira Shimizu

Shingo Okushima

Takahisa Kato

Toru Nakakubo

Junichi Seki

Futoshi Hirose

Yasushi Koyama

Naoto Nakamura

Yoshikiyo Yui

Masatake Akaike

Suguru Miyagawa

Sayaka Tanimoto

Nao Nakatsuji

Masaki Takakuwa

Harunobu Muto

Ken-ichi Nagae

Ken-Ichi Nagae

Yoshinori c/o Hitachi Ltd Nakayama

An imprint method for imprinting a pattern of a mold onto a resin material on a substrate. The imprint method includes a step of forming a processed area in which an imprint pattern corresponding to the pattern of the mold is formed, and an outside area formed of a periphery of the processed area, by bringing the mold into contact with the resin material formed on the substrate, so that a portion of the resin material is extruded from the processed area into the outside area, a step of forming a protection layer for protecting the processed area, and a step of removing a layer of the resin material in the outside area, while the imprint pattern formed on a layer of the resin material in the processed area, is protected by the protection layer, so as not to be removed.

Imprint method for imprinting a pattern of a mold onto a resin material of a substrate and related substrate processing method

A method for forming an etching mask comprises irradiating a focused ion beam onto a surface of a substrate and forming an etching mask used for oblique etching including an ion containing portion in the irradiated region. A method for fabricating a three-dimensional structure comprises preparing a substrate, irradiating a focused ion beam onto a surface of the substrate and forming an etching mask including an ion-containing portion in the irradiated region, and dry-etching the substrate from a diagonal direction using the etching mask and forming a plurality of holes.

Method for forming etching mask, method for fabricating three-dimensional structure and method for fabricating three-dimensional photonic crystalline laser device

Provided is a continuous-type charge deflection liquid ejection head that is suitable for higher-density and multiple nozzles. This liquid ejection head includes: an orifice plate having a plurality of nozzles arranged in a two-dimensional manner; a charging electrode plate having a charging electrode to charge ink droplets from each of the plurality of nozzles; and first and second deflection electrode plates each having a deflection electrode to deflect each of the ink droplets charged by the charging electrode, in which each of the charging member, the first deflection member, and the second deflection member has through-holes that ink droplets pass through, and the charging member, the first deflection member, and the second deflection member are laminated in this order in an ejecting direction of the ink droplets.

Liquid ejection head utilizing deflection members

A method of manufacturing a nano structure by etching, using a substrate containing Si. A focused Ga ion or In ion beam is irradiated on the surface of the substrate containing Si. The Ga ions or the In ions are injected while sputtering away the surface of the substrate so that a layer containing Ga or In is formed on the surface of the substrate. Dry etching by a gas containing fluorine (F) is performed with the layer containing the Ga or the In formed on the surface of the substrate taken as an etching mask, and the nano structure is formed having a pattern of at least 2 &#x3bc;m tin in depth according to a predetermined line width.

Method of manufacturing a nano structure by etching, using a substrate containing silicon

A nano structure formed on the surface of a substrate containing Si and having a pattern of at least 2 &#x3bc;m in depth, in which Ga or In is contained in the surface of the pattern, and the Ga or the In has a concentration distribution that an elemental composition ratio Ga/Si or In/Si of Si and Ga or In detected by an X-ray photoelectron spectroscopy is at least 0.4 atomic percent in the depth direction of the substrate, and the maximum value of the concentration is positioned within 50 nm of the surface of the pattern.

Nano structure and method of manufacturing nano structure

A process for forming a three-dimensional photonic crystal comprises the steps of providing a base material having a first face and a second face adjoining to each other at a first angle, forming a first mask on the first face, dry-etching the first face in a direction at a second angle to the first face to remove a portion of the base material not protected by the first mask, forming a second mask on the second face, and dry-etching the second face in a direction at a third angle to the second face to remove a portion of the base material not protected by the second mask.

Process for formation of three-dimensional photonic crystal

A method for fabricating a three-dimensional photonic crystal comprises the steps of: forming a dielectric thin film; injecting ions selectively into the dielectric thin film by using a focus ion beam to form a mask on the dielectric thin film; forming a pattern by selectively removing an exposed part of the dielectric thin film at which the mask is not formed on the dielectric thin film; forming a sacrificial layer on the dielectric thin film having the pattern formed therein; and flattening the sacrificial layer formed on the dielectric thin film until the pattern comes to the surface.

Method for fabricating three-dimensional photonic crystal

A charged beam processing apparatus for processing an object to form structures on the object includes a processing chamber, a multi-charged beam optical system configured to generate a plurality of charged beams, and to converge and to deflect the plurality of charged beams to irradiate the object in the processing chamber with the plurality of charged beams, and a supply port configured to supply a gas into the processing chamber. The multi-charged beam optical system includes (i) a lens array, and (ii) a pattern forming plate configured to select a portion of the lens array to be used to form the structures. The charged beam processing apparatus includes a controller configured to control an exchange of the pattern forming plate in accordance with an arrangement pattern of the structures to be formed on the object.

Charged beam processing apparatus

A charged-particle beam exposure apparatus includes a charged-particle beam source for emitting a charged-particle beam, an electrooptic system array which has a plurality of electron lenses and forms a plurality of intermediate images of the charged-particle beam source by the plurality of electron lenses, and a projection electrooptic system for projecting on a substrate the plurality of intermediate images formed by the electrooptic system array. The electrooptic system array includes at least two electrodes arranged along paths of a plurality of charged-particle beams, each of the at least two electrodes having a plurality of apertures on the paths of the plurality of charged-particle beams, and a shield electrode which is interposed between the at least two electrodes and has a plurality of shields corresponding to the respective paths of the plurality of charged-particle beams.

Electrooptic system array, charged-particle beam exposure apparatus using the same, and device manufacturing method

A deflector which makes multilayered wiring possible and prevents contamination during the manufacture includes an electrode substrate () having a plurality of through holes, and an electrode pair made up of first and second electrodes which oppose the side walls of each through hole in order to control the locus of a charged particle beam passing through the through hole, and a wiring substrate () having connection wiring pads connected to the electrode pairs of the electrode substrate to individually apply voltages to the electrode pairs. This deflector is formed by bonding the electrode substrate and wiring substrate via the connection wiring pads of the wiring substrate.

Deflector, method of manufacturing deflector, and charged particle beam exposure apparatus using deflector

A multi-charged beam lens formed by stacking, via insulators, at least three substrates each having a plurality of apertures which pass charged beams. The lens includes a voltage application portion arranged on at least one of the at least three substrates. The voltage application portion and the insulators are connected via an insulating portion consisting of an oxide material in order to achieve electrical isolation between the voltage application portion and the insulators.

Multi-charged beam lens and charged beam exposure apparatus using the same

A semiconductor manufacturing factory includes a plurality of semiconductor manufacturing apparatuses including an exposure apparatus for exposing a substrate by using a plurality of charged particle beams, a local area network for connecting the plurality of semiconductor manufacturing apparatuses, and a gateway for connecting the local area network to an external network of the semiconductor manufacturing factory. The exposure apparatus includes a lens array, which has a plurality of lenses and directs a plurality of charged particle beams onto a substrate. The lens array includes at least two electrodes having a plurality of apertures on the paths of the plurality of charged-particle beams, and a shield electrode interposed between the at least two electrodes.

This invention relates to an electrooptic system array having a plurality of electron lenses. The electrooptic system array includes upper, middle, and lower electrodes arranged along the paths of a plurality of charged-particle beams, the upper, middle, and lower electrodes having pluralities of apertures on the paths of the plurality of charged-particle beams, an upper shield electrode which is interposed between the upper and middle electrodes and has a plurality of shields corresponding to the respective paths of the charged-particle beams, and a lower shield electrode which is interposed between the lower and middle electrodes and has a plurality of shields corresponding to the respective paths of the charged-particle beams.

There is provided a multi-charged beam lens constituted by stacking, via fiber chips serving as insulator members along the optical path of a charged beam, a plurality of electrodes having a charged beam passing region where a plurality of charged beam apertures are formed. The electrodes have shield apertures between the charged beam passing region and the fiber chips. A conductive shield extends through the shield apertures without contacting the electrodes, and cuts off a straight path which connects the charged beam passing region and the fiber chips serving as insulator members. This prevents the influence of charge-up of the insulator members on an electron beam in the multi-charged beam lens.

Multi-charged beam lens, charged-particle beam exposure apparatus using the same, and device manufacturing method

An electron optical system has a plurality of electron lenses. The system includes a first electron optical system array having electrodes with a plurality of rectangular apertures, and a second electron optical system array having electrodes with a plurality of rectangular apertures. The first and second electron optical system arrays are arranged along an optical axis in which a long side of each aperture of the first electron optical system array is perpendicular to a long side of each aperture of the second electron optical system array.

Growing community of inventors

Kanagawa, Japan

Haruhito Ono