Carl Zeiss Smt Gmbh

Carl-zeiss-smt Ag

Hartmut Enkisch

Stephan Muellender

Hans-Juergen Mann

Martin Endres

Thomas Schicketanz

Johann Trenkler

Oliver Dier

Sebastian Strobel

Toralf Gruner

Damian Fiolka

Michael Totzeck

Markus Weiss

Marco Wedowski

Birgit Enkisch

Joern Weber

Christoph Nottbohm

Matus Kalisky

Gisela Sipos

Nadyeh Shariloo, Legal Representative

Wilhelm Ulrich

Norbert Wabra

Udo Dinger

Fokko Pieter Wieringa

Michiel David Nijkerk

Rolf Freimann

Boris Bittner

Markus Schwab

Stig Bieling

Olaf Conradi

Ulrich Mueller

Frederik Bijkerk

Franz-Josef Stickel

Berndt Warm

Kerstin Hild

Oliver Natt

Hans-Jochen Paul

Martin Von Hodenberg

Peter Huber

Hin Yiu Anthony Chung

Sascha Migura

Michael Krause

Andrey E Yakshin

Stefan Wiesner

Hubert Adriaan Van Mierlo

Ralf Winter

Martin Hermann

Viacheslav Medvedev

Stefan Burkart

Martin Rocktaeschel

Christian Grasse

Wilheim Ulrich

Dmitry Kuznetsov

Stephan Müllender

H A Van Mierlo

Sandro Hoffmann

Mirko Ribow

Matthias Sturm

Jürgen Baier

Christos Kourouklis

Sigfried Rennon

Günther Dengel

In a method for producing an optical element for an EUV projection exposure apparatus, a shaping layer () is applied onto a substrate () so as to have a surface roughness of at most 0.5 nm rms directly after the application of the shaping layer onto the substrate.

Optical element for a EUV projection exposure system

For increasing reflectivity a reflective optical element for the extreme ultraviolet wavelength range consists of at least two upper units, in which each upper unit (B-B) has a plurality of lower units, for example reflective optical elements in the form of mirror arrays. A method for producing the reflective optical element includes: determination of incidence angles and incidence angle bandwidths occurring during operation above the surface of each upper unit (B-B); and application of a reflective coating to each upper unit (B-B), adapted to the incidence angles and incidence angle bandwidths respectively determined above the surface of each upper unit. This is particularly suitable for producing reflective optical elements embodied as field facet mirrors, particularly in the form of microelectromechanical mirror arrays, for an EUV lithography device.

Method for producing a reflective optical element and reflective optical element

For a working wavelength in the range from 1 nm to 12 nm, a reflective optical element has, on a substrate, a multilayer system that includes at least two alternating materials having a different real part of the refractive index at the working wavelength. The multilayer system includes a first alternating material from the group formed from thorium, uranium, barium, nitrides thereof, carbides thereof, borides thereof, lanthanum carbide, lanthanum nitride, lanthanum boride, and a second alternating material from the group formed from carbon, boron, boron carbide, or lanthanum as first alternating material and carbon or boron as second alternating material. It has, on the side of the multilayer system remote from the substrate, a protective layer system including a nitride, an oxide and/or a platinum metal.

Reflective optical element

An optical element for an optical system that operates with working light in the wavelength spectrum of extreme ultraviolet light or soft X-ray radiation, in particular an optical system for EUV microlithography, that includes an absorber layer () for EUV or soft X-ray radiation. The absorber layer extends along an optically effective surface and has a thickness that is defined transversely with respect to the optically effective surface, wherein the thickness of the absorber layer varies over the optically effective surface. Also disclosed is a mirror formed by at least one roughened surface of the mirror, the roughness of which varies over the surface. In addition, an illumination system for an EUV projection exposure apparatus, and a method for producing a corresponding intensity adaptation filter are disclosed.

Intensity adaptation filter for EUV microlithography, method for producing same, and illumination system having a corresponding filter

A mirror element, in particular for a microlithographic projection exposure apparatus. According to one aspect, the mirror element includes a substrate (-) and a layer stack (-) on the substrate. The layer stack has at least one reflection layer system, wherein a curvature of the mirror element is generated on the basis of a setpoint curvature for a predetermined operating temperature by a non-vanishing bending force exerted by the layer stack, wherein the generated curvature varies by no more than 10% over a temperature interval (&#x394;T) of at least 10 K.

Mirror element, in particular for a microlithographic projection exposure apparatus

A projection optical unit for EUV projection lithography has a plurality of mirrors for imaging an object field into an image field with illumination light. At least one of the mirrors is an NI mirror and at least one of the mirrors is a GI mirror. A mirror dimension Dx of the at least one NI mirror in a plane of extent (xz) perpendicular to a plane of incidence (yz) satisfies the following relationship:4 A mirror dimension Dy of the at least one GI mirror in the plane of incidence (yz) satisfies the following relationship:4/(cos())&#x3c;

Projection optical unit for EUV projection lithography

An optical system, in particular for a microlithographic projection exposure apparatus, with at least one mirror () which has an optically effective surface and, for electromagnetic radiation of a predefined operating wavelength impinging on the optically effective surface at an angle of incidence of at least 65&#xb0; relative to the respective surface normal, has a reflectivity of at least 0.5. The mirror has a reflection layer () and a compensation layer () which is arranged above this reflection layer () in the direction of the optically effective surface. The compensation layer (), for an intensity distribution generated in a pupil plane or a field plane of the optical system during operation thereof, reduces the difference between the maximum and the minimum intensity value by at least 20% compared to an analogous structure without the compensation layer.

Optical system, in particular for a microlithographic projection exposure apparatus

A method for producing a mirror element, in particular for a microlithographic projection exposure apparatus includes: providing a substrate (); and forming a layer stack () on the substrate, wherein the layer stack is formed so that a setpoint curvature of the mirror element for a predetermined operating temperature is generated by a bending force exerted by the layer stack, wherein the substrate has a curvature deviating from the setpoint curvature of the mirror element prior to the formation of the layer stack, and wherein the bending force exerted by the layer stack is at least partly generated by virtue of a post-treatment for changing the layer tension of the layer stack.

Method for producing a mirror element

A mirror, in particular for a microlithographic projection exposure apparatus, has an optically effective surface, a mirror substrate (), a reflection layer (), which is configured to provide the mirror with a reflectivity of at least 50% for electromagnetic radiation with a predetermined operating wavelength incident on the optically effective surface () at angles of incidence in relation to the respective surface normals of at least 65&#xb0;, and a substrate protection layer () which is arranged between the mirror substrate () and the reflection layer (). The substrate protection layer has a transmission of less than 0.1% for EUV radiation.

Mirror, in particular for a microlithographic projection exposure apparatus

An illumination system for an optical arrangement such as an EUV lithography apparatus, having: at least one optical element which has at least one optical surface, on which a coating which reflects illumination radiation is applied, and an actuator device aligning the optical surface in at least two angular positions in the radiation path. The coating either has a thickness (d) at which a mean value (&#xbd;(R+R)) formed from a thickness-dependent reflectivity (R, R) of the coating at the at least two angular positions is maximized or has a thickness (d) at which a maximum change (max(&#x394;R/R, &#x394;R/R)) in the reflectivity (R, R) caused by a thickness tolerance of the coating is minimized at the respective angular positions or else the reflecting coating has a thickness (d) at which the reflectivity (R, R) of the coating has the same magnitude in the at least two angular positions.

Reflecting coating with optimized thickness

A mirror, in particular for a microlithographic projection exposure apparatus has an optically effective surface, wherein the mirror has a reflectivity of at least 0.5 for electromagnetic radiation which has a prescribed working wavelength and impinges on the optically effective surface at an angle of incidence based on the respective surface normal of at least 65&#xb0;, wherein the mirror has at least one layer () which comprises a compound of an element of the second period and an element of the 4d transition group, wherein the mirror has a protective layer () arranged on top in the direction of the optically effective surface, wherein the material of the layer () arranged in each case underneath the protective layer in the direction of the optically effective surface has a lower absorption than the material of the protective layer ().

A reflective optical element () having a substrate () and a multilayer system () that has a plurality of partial stacks (), each with a first layer () of a first material and a second layer () of a second material. The first material and the second material differ from one another in refractive index at an operating wavelength of the optical element. Each of the partial stacks has a thickness (D) and a layer thickness ratio (&#x393;), wherein the layer thickness ratio is the quotient of the thickness of the respective first layer and the partial stack thickness (D). In a first section of the multilayer system, for at least one of the two variables of partial stack thickness (D) and layer thickness ratio (&#x393;), the mean square deviation from the respective mean values therefor is at least 10% less than in a second section of the multilayer system.

Reflective optical element, and optical system of a microlithographic projection exposure apparatus

An illumination optical unit for microlithography illuminates an object field with illumination light. The unit includes a first facet mirror that has a plurality of first facets, and a second facet mirror that has a plurality of second facets. The unit has facet pairs which include respectively a facet of the first facet mirror and a facet of the second facet mirror which predefine a plurality of illumination channels for illuminating the object field. At least some of the illumination channels have in each case an assigned polarization element for predefining an individual polarization state of the illumination light guided in the respective illumination channel.

Microlithography illumination system and microlithography illumination optical unit

The invention concerns a projection objective of a microlithographic projection exposure apparatus designed for EUV, for imaging an object plane illuminated in operation of the projection exposure apparatus into an image plane. The projection objective has at least one mirror segment arrangement comprising a plurality of separate mirror segments. Associated with the mirror segments of the same mirror segment arrangement are partial beam paths which are different from each other and which respectively provide for imaging of the object plane (OP) into the image plane (IP). The partial beam paths are superposed in the image plane (IP). At least two partial beams which are superposed in the same point in the image plane (IP) were reflected by different mirror segments of the same mirror segment arrangement.

Projection objective of a microlithographic projection exposure apparatus

A reflective optical element of an optical system for EUV lithography and an associated manufacturing method. The reflective optical element () includes a multilayer system () for reflecting an incident electromagnetic wave having an operating wavelength in the EUV range, the reflected wave having a phase &#x3c6;, and a capping layer () made from a capping layer material. The method includes determining a dependency according to which the phase of the reflected wave varies with the thickness d of the capping layer, determining a linearity-region in the dependency in which the phase of the reflected wave varies substantially linearly with the thickness of the capping layer, and creating a thickness profile in the capping layer such that both the maximum thickness and the minimum thickness in the thickness profile are in the linearity-region.

Reflective optical element for EUV lithography and method of manufacturing a reflective optical element

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Aalen, Germany

Hartmut Enkisch