Asml Holding N.v.

Asml Netherlands B.v.

Other

The Perkin-elmer Corporation

Asml Holdings N.v.

Asml Holding B.v.

Harry Sewell

Louis John Markoya

Diane Czop McCafferty

Aleksandr Khmelichek

Richard Johannes Franciscus Van Haren

Sjoerd Nicolaas Lambertus Donders

Justin Lloyd Kreuzer

Mircea Dusa

Maya Angelova Doytcheva

Erik Roelof Loopstra

Johannes Catharinus Hubertus Mulkens

Martinus Hendrikus Antonius Leenders

Andrew W McCullough

Marcus Martinus Petrus Adrianus Vermeulen

Christopher John Mason

Manfred Gawein Tenner

Arie Jeffrey Den Boef

Nicolaas Ten Kate

Matthew Lipson

Jozef Petrus Henricus Benschop

Sanjeev Kumar Singh

Jorge S Ivaldi

Eric Brian Catey

Earl William Ebert

Nabila Baba-Ali

John Shamaly

Diane Elaine Markoya

Johannes Jacobus Matheus Baselmans

Maurits Van Der Schaar

Daniel Nicholas Galburt

Erik Theodorus Maria Bijlaart

Yevgeniy Konstantinovich Shmarev

Adel Joobeur

Michael L Nelson

Michael M Albert

Ewoud Vreugdenhil

Jere D Buckley

Ralph Joseph Meijers

Louis Markoya

Robertus Wilhelmus Van Der Heijden

Keith William Andresen

Marina Khmelichek, Legal Representative

Luis Markoya

Charles Karatzas

Frits Zernike

Keith Andersen

A new way of drying and/or wetting a surface, such as a top surface of a substrate, is disclosed which is useful in immersion lithography. The surface is placed under a single phase extractor and a priming liquid is delivered between the single phase extractor and the surface. The single phase extractor is only activated after the priming liquid has been provided between the single phase extractor and the surface. Priming liquid is delivered to the single phase extractor during the whole of the drying and/or wetting process.

Lithographic apparatus, a dryer and a method of removing liquid from a surface

A new way of drying and/or wetting a surface, such as a top surface of a substrate, which is useful in immersion lithography. The surface is placed under a single phase extractor and a priming liquid is delivered between the single phase extractor and the surface. The single phase extractor is only activated after the priming liquid has been provided between the single phase extractor and the surface. Priming liquid is delivered to the single phase extractor during the whole of the drying and/or wetting process.

A system for tuning the refractive index of immersion liquid in an immersion lithographic apparatus is disclosed. Two or more immersion liquids of different refractive index are mixed together in order to achieve a desired refractive index. Further, the fluids may be conditioned and treated to maintain optical characteristics.

Lithographic apparatus, fluid combining unit and device manufacturing method

Disclosed are apparatuses, methods, and lithographic systems for EUV mask inspection. An EUV mask inspection system can include an EUV illumination source, an optical system, and an image sensor. The EUV illumination source can be a standalone illumination system or integrated into the lithographic system, where the EUV illumination source can be configured to illuminate an EUV radiation beam onto a target portion of a mask. The optical system can be configured to receive at least a portion of a reflected EUV radiation beam from the target portion of the mask. Further, the image sensor can be configured to detect an aerial image corresponding to the portion of the reflected EUV radiation beam. The EUV mask inspection system can also include a data analysis device configured to analyze the aerial image for mask defects.

EUV mask inspection system

A mask inspection system with Fourier filtering and image compare can include a first detector, a dynamic Fourier filter, a controller, and a second detector. The first detector can be located at a Fourier plane of the inspection system and can detect a first portion of patterned light produced by an area of a mask. The dynamic Fourier filter can be controlled by the controller based on the detected first portion of the patterned light. The second detector can detect a second portion of the patterned light produced by the section of the mask and transmitted through the dynamic Fourier filter. Further, the mask inspection system can include a data analysis device to compare the second portion of patterned light with another patterned light. Consequently, the mask inspection system is able to detect any possible defects on the area of the mask more accurately and with higher resolution.

Mask inspection with fourier filtering and image compare

A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The dye may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist).

Alignment target contrast in a lithographic double patterning process

An immersion lithography apparatus is provided that includes an energy source, a projection optical system, a stage, a showerhead including an immersion liquid supply device and an immersion liquid discharge device that produces a flow of liquid within an exposure zone, and a cleaning device that cleans a portion of the projection optical system having been contacted with the immersion liquid by means of a cleaning gas. In an embodiment, the cleaning device includes an ozone generation unit produces a flow of ozone into the exposure zone. In embodiments, the apparatus includes a stage that includes a dose sensor and/or an ultra-violet light source. A method for insitu cleaning of a final lens element within an immersion lithography system having an immersion fluid showerhead that provides immersion fluid to an exposure zone of the immersion lithography system is also provided.

Systems and methods for insitu lens cleaning using ozone in immersion lithography

Immersion lithography aberration control systems and methods that compensate for a heating effect of exposure energy in an immersion fluid across an exposure zone are provided. An aberration control system includes actuators that adjust optical elements within the immersion lithography system and a fluid heating compensation module coupled to the actuators. The fluid heating adjustment module determines actuator commands to make aberration adjustments to optical elements within the immersion lithography system based on changes in one or more of a flow rate of the immersion liquid, an exposure dose and a reticle pattern image. In an embodiment, the aberration control system includes an interferometric sensor that pre-calibrates aberrations based on changes in operating characteristics related to the immersion fluid. Methods are provided that calibrate aberrations, determine actuator adjustments and implement actuator adjustments upon changes in operating characteristics to control aberration effects.

Systems and methods for thermally-induced aberration correction in immersion lithography

A lithographic apparatus has an alignment system including a radiation source configured to convert narrow-band radiation into continuous, flat and broad-band radiation. An acoustically tunable narrow pass-band filter filters the broad-band radiation into narrow-band linearly polarized radiation. The narrow-band radiation may be focused on alignment targets of a wafer so as to enable alignment of the wafer. In an embodiment, the filter is configured to modulate an intensity and wavelength of radiation produced by the radiation source and to have multiple simultaneous pass-bands. The radiation source generates radiation that has high spatial coherence and low temporal coherence.

Tunable wavelength illumination system

Improving alignment target contrast in a lithographic double patterning process

A lithographic apparatus and method for simultaneously exposing two patterning devices onto a substrate is disclosed. In an embodiment, a lithographic apparatus includes a plurality of illumination systems for receiving and conditioning a pulsed radiation beam, a beam director arranged between a source of the pulsed radiation and the illumination systems for alternately directing pulses of the radiation beam to the respective illumination systems, a support table for holding a plurality of patterning devices, each of the patterning devices being capable of imparting a respective conditioned radiation beam with a pattern in its cross-section to form a plurality of patterned radiation beams, and a projection system configured to project each of the plurality of patterned radiation beams coincidentally onto a target portion of a substrate. In an embodiment, the substrate is covered with a phase change material.

Lithographic apparatus and device manufacturing method

An immersion lithography apparatus is provided that includes an energy source, a projection optical system, a stage, a showerhead including an immersion liquid supply device and an immersion liquid discharge device that produces a flow of liquid within an exposure zone, and a cleaning device that cleans a portion of the projection optical system having been contacted with the immersion liquid by means of a cleaning gas. In an embodiment, the cleaning device includes a gas supply device and a gas discharge device that produce a flow of cleaning gas into the exposure zone. In embodiments, the apparatus includes a stage that includes a dose sensor and/or an ultra-violet light source. A method for insitu cleaning of a final lens element within an immersion lithography system having an immersion fluid showerhead that provides immersion fluid to an exposure zone of the immersion lithography system is also provided.

Systems and methods for insitu lens cleaning in immersion lithography

A lithographic apparatus includes a projection system, a fluid handling structure, a metrology device, and a recycling control device. The projection system is configured to project a patterned radiation beam onto a target portion of a substrate, the substrate being supported on a substrate table. The fluid handling structure is configured to provide an immersion fluid to a space between the projection system and the substrate and/or substrate table. The metrology device is configured to monitor a parameter of the immersion fluid. The recycling control device regulates a routing of the immersion fluid either to be reused by the fluid handling structure or to be reconditioned based on the quality of immersion fluid indicated by the metrology device.

Immersion lithographic apparatus with immersion fluid re-circulating system

A semiconductor wafer is aligned using a double patterning process. A first resist layer having a first optical characteristic is deposited and foams at least one alignment mark. The first resist layer is developed. A second resist layer having a second optical characteristic is deposited over the first resist layer. The combination of first and second resist layers and alignment mark has a characteristic such that radiation of a pre-determined wavelength incident on the alignment mark produces a first or higher order diffraction as a function of the first and second optical characteristics.

Method and system for increasing alignment target contrast

Growing community of inventors

Ridgefield, CT, United States of America

Harry Sewell