International Business Machines Corporation

Globalfoundries Inc.

International Buisiness Machines Corporatoin

Harry S Barowski

Tim Niggemeier

Joachim Keinert

Sourav Saha

Harald Folberth

Bruno Michel

Thomas J Brunschwiler

Andreas Huber

Stephan Paredes

Hubert Harrer

Jochen Supper

Haoxing Ren

Sridhar H Rangarajan

Wolfgang Penth

Jonas R Weiss

Roger F Dangel

Norbert M Meier

Rolf Sautter

Michael B Kugel

Silvia Melitta Mueller

Sheldon Bernard Levenstein

Pradip Patel

Daniel Rodko

Jochen Preiss

Tobias Gemmeke

Werner Juchmes

Martin Bernhard Schmidt

Gordon B Sapp

Tobias Werner

Thomas Strach

Silke Penth

Friedrich Schroeder

Antje Mueller

J Adam Butts

Maarten Boersma

Gunnar Spiess

Viresh Paruthi

Stephen Victor Kosonocky

Markus Brink

Juergen Pille

Maarten Jakob Boersma

Thomas Pflueger

Hans-Werner Tast

Jens Leenstra

Wolfgang Gellerich

Alexander Fritsch

Peter Altevogt

Nicolas Maeding

Rolf B Hilgendorf

Alexander Albert Woerner

Kurt Lind

Albert Frisch

Hartmut R Schwermer

Harald Mielich

Ajith Kumar M Chandrasekaran

Simon Brandl

Maarten Jokob Boersma

Friedrich Schröder

Alexander Wörner

Matthias Hock

Harold Mielich

Amira Rozenfeld

A true complement dynamic circuit for combining, in particular comparing, binary data on dynamic first and second input signals to third and fourth input signals, comprising at least a 1-bit compare circuit, wherein the dynamic first and second input signals are complementary signals during an evaluation phase, wherein a logical behavior is determined by the third and fourth input signals. A method for operating a true complement dynamic circuit for combining, in particular comparing, binary data on dynamic first and second input signals to third and fourth input signals, comprising operating at least a 1-bit compare circuit, wherein the dynamic first and second input signals are complementary signals during an evaluation phase, determining a logical behavior by the third and fourth input signals.

True complement dynamic circuit and method for combining binary data

The disclosure relates to an initialization circuit for initializing memory cells of a memory array including a common bit line. Individual memory cells are coupled to the common bit line of the memory array via at least one pass element of the individual memory cells. The initialization circuit is operable for receiving a set of partition addresses specifying the partitions, i.e. the memory cells to be initialized. The initialization circuit is operable for successively initializing one cell of the partitions to be initialized and iteratively initializing the remaining memory cells of the partitions to be initialized. A number of memory cells initialized simultaneously in one iteration increases from one iteration to another iteration. Initializing a certain memory cell comprises activating the pass element of the cell so that the memory cell is connected to the bit line. Further aspects relate to methods for initializing memory cells and semiconductor circuits.

Erasing a partition of an SRAM array with hardware support

An embodiment of a qubit tuning device includes a first layer configured to generate a magnetic field, the first layer comprising a material exhibiting superconductivity in a cryogenic temperature range. In an embodiment, the qubit tuning device includes a qubit of a quantum processor chip, wherein the first layer is configured to magnetically interact with the qubit such that a first magnetic flux of the first layer causes a first change in a first resonance frequency of the qubit by a first frequency shift value.

Qubit tuning by magnetic fields in superconductors

Disclosed aspects relate to a digital logic circuit. A clock generation circuitry has both a clock generation circuitry output and an inverter circuit to generate a derivative clock signal feature by inverting an array clock signal feature. A scannable storage element has both a scannable storage element output and a set of flip-flops. A memory array is connected with the scannable storage element output and the array clock signal feature. The digital logic circuit is configured to avoid a race violation.

Digital logic circuit for deterring race violations at an array test control boundary using an inverted array clock signal feature

A memory cell arrangement for Random Access Memory (RAM) including one or more RAM cell groups. The RAM cell groups having two or more local bit-lines sharing a Global Bit-Line (GBL), a pre-charging circuit connected to the GBL, a multiplexer connected to multiple GBLs and configured to shift an output of a first GBL from a first bit to a second bit at least in part according to a value of a fuse bit register associated with a second GBL, and at least one pre-charge enabling circuit controlled by a combination of a pre-charge input value applied to all GBLs of the memory cell arrangement and a pre-charge enable signal for the GBL.

RAM memory with pre-charging circuitry coupled to global bit-lines and method for reducing power consumption

A method for adding an electrical interconnection within a three-dimensional integrated circuit (3-D IC) is disclosed. The method may include creating, within a design file of a 3-D IC that specifies a layout for a first chip of the 3-D IC, design data corresponding to a set of through-silicon via (TSV) reservation areas. The method may also include receiving an engineering change order (ECO) and releasing, in response to the ECO, at least one TSV reservation area for reuse. The method may also include adding, by re-using at least one TSV reservation area, an electrical interconnection within the design file of the first chip of the 3-D IC.

Integrated circuit design changes using through-silicon vias

Embodiments for global bit line latch performance and power optimization are described herein. An aspect includes a bit line including a first section, a second section, and coupling circuitry arranged between the first section and the second section, the coupling circuitry adapted to causes a voltage drop between the first section and the second section, and at least one logic element including a first branch connected to a first power supply and a second branch connected to a second power supply, wherein the first branch is connected to the first section of the bit line, and wherein the second branch is connected to the second section of the bit line.

Global bit line latch performance and power optimization

The present invention provides a system and method of testing CAMs and RAMs. In an exemplary embodiment, the system includes a multiple input signature register (MISR) logically coupled to digital outputs of a CAM, to digital inputs of a RAM, and to digital outputs of an ABIST controller circuit, where the MISR includes a plurality of L1 latch circuits logically coupled to a plurality of L2 latch circuits, a plurality of multiplexer circuits logically coupled to the plurality of L1 latch circuits, a plurality of exclusive or circuits (inner XOR circuits) logically coupled to the plurality of MUX circuits and to the plurality of L2 latch circuits, and at least two XOR circuits (outer XOR circuits), each of the outer XOR circuits logically coupled to one of the inner XOR circuits, to at least one of the MUX circuits, and to at least one of the L2 latch circuits.

Testing content addressable memory and random access memory

Disclosed aspects relate to a digital logic circuit. A clock generation circuitry has both a clock generation circuitry output and an inverter circuit to generate a derivative clock signal feature by inverting an array clock signal feature. A scanable storage element has both a scanable storage element output and a set of flip-flops. A memory array is connected with the scanable storage element output and the array clock signal feature. The digital logic circuit is configured to avoid a race violation.

Generating a layout of an integrated circuit chip area from a description of an integrated circuit (IC). The description includes a register-transfer-level (RTL) design. The RTL design is partitioned in large blocks for synthesis of large block synthesis (LBS) blocks. The description of the IC further includes a floorplan for the IC, wherein each LBS block to be synthesized is assigned to a respective rectilinear shape in the floorplan and the rectilinear shapes do not overlap each other.

Layout of large block synthesis blocks in integrated circuits

A semiconductor circuit is provided having a crossbar switch arrangement, which includes at least one multiplexer, an output of which corresponds to an output of the crossbar switch arrangement. The arrangement also includes: a set of input lines connected to data inputs of the multiplexer, the input lines extending along a first direction of the semiconductor circuit; and a set of select lines connected to select inputs of the multiplexer, the select lines extending along a second direction of the semiconductor circuit, where the second direction differs from the first direction. The multiplexer includes at least one multiplexing circuit for generating a multiplexed signal from signals present at the input lines and at least one primary output driver for generating an output signal from the multiplexed signal.

Cross bar switch structure for highly congested environments

Growing community of inventors

Boeblingen, Germany

Harry S Barowski