Air Products and Chemicals, Inc.

Applied Materials, Inc.

Other

Versum Materials Us, LLC

Hareesh Thridandam

Xinjian Lei

Manchao Xiao

Scott Jeffrey Weigel

Timothy Weidman

Alexandros T Demos

Robert Parkash Mandal

Thomas R Gaffney

Nikolaos Bekiaris

Michael P Nault

Lee Arthur Senecal

Kirk Scott Cuthill

Robert Daniel Clark

Ronald Martin Pearlstein

Eugene Joseph Karwacki, Jr

Arthur Kenneth Hochberg

Steven Gerard Mayorga

James Edward MacDougall

Heather Regina Bowen

James Edward Mac Dougall

Stuart H Dimock

James E MacDougal

Thomas Richard Gaffney

Jr Eugene Joseph Karwacki

A method for making the EDA that is suitable for use in thin-film semiconductor processing applications, are disclosed. The EDA is purified to remove water and trace metals. Water levels below about 50 ppm by weight are achieved by passing liquid through 3A type molecular sieve in a packed bed. Metallic impurities are removed by distillation and the resulting product is packaged in specially dried and optionally pre-conditioned containers.

High purity ethylenediamine for semiconductor applications

The present invention is a process of plasma enhanced cyclic chemical vapor deposition of silicon nitride, silicon carbonitride, silicon oxynitride, silicon carboxynitride, and carbon doped silicon oxide from alkylaminosilanes having Si&#x2014;H, preferably of the formula (RRN)SiHwherein Rand Rare selected independently from Cto Cand a nitrogen or oxygen source, preferably ammonia or oxygen has been developed to provide films with improved properties such as etching rate, hydrogen concentrations, and stress as compared to films from thermal chemical vapor deposition.

Plasma enhanced cyclic chemical vapor deposition of silicon-containing films

The present invention is directed to a method for depositing a silicon oxide layer on a substrate by CVD. The reaction of an organoaminosilane precursor where the alkyl group has at least two carbon atoms in the presence of an oxidizing agent allows for the formation of a silicon oxide film. The organoaminosilanes are represented by the formulas:  The use of diisopropylaminosilane is the preferred precursor for the formation of the silicon oxide film.

Process for producing silicon oxide films for organoaminosilane precursors

A process to deposit metal silicon nitride on a substrate comprising: sorbing a metal amide on a heated substrate, purging away the unsorbed metal amide, contacting a silicon-containing source having one or more Si&#x2014;Hfragments with the heated substrate to react with the sorbed metal amide, wherein the silicon-containing source has one or more HSi&#x2014;NR(R&#x2550;SiH, R, Ror R, defined below) groups selected from the group consisting of one or more of: wherein R and Rin the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., branched alkyl, cycloalkyl with R and Rin formula A also being combinable into a cyclic group, and Rrepresenting a single bond, (CH), a ring, or SiH, and purging away the unreacted silicon-containing source.

Cyclic chemical vapor deposition of metal-silicon containing films

A method for forming a metal silicate as a high k dielectric in an electronic device, comprising the steps of: providing diethylsilane to a reaction zone; concurrently providing a source of oxygen to the reaction zone; concurrently providing a metal precursor to the reaction zone; reacting the diethylsilane, source of oxygen and metal precursor by chemical vapor deposition to form a metal silicate on a substrate comprising the electronic device. The metal is preferably hafnium, zirconium or mixtures thereof. The dielectric constant of the metal silicate film can be tuned based upon the relative atomic concentration of metal, silicon, and oxygen in the film.

Diethylsilane as a silicon source in the deposition of metal silicate films

A process for depositing porous silicon oxide-based films using a sol-gel approach utilizing a precursor solution formulation which includes a purified nonionic surfactant and an additive among other components, where the additive is either an ionic additive or an amine additive which forms an ionic ammonium type salt in the acidic precursor solution. Using this precursor solution formulation enables formation of a film having a dielectric constant less than 2.5, appropriate mechanical properties, and minimal levels of alkali metal impurities. In one embodiment, this is achieved by purifying the surfactant and adding ionic or amine additives such as tetraalkylammonium salts and amines to the stock precursor solution.

Ionic additives for extreme low dielectric constant chemical formulations

This invention is related to organometallic precursors and deposition processes for fabricating conformal metal containing films on substrates such as silicon, metal nitrides and other metal layers. The organometallic precursors are N,N'-alkyl-1,1-alkylsilylamino metal complexes represented by the formula: wherein M is a metal selected from Group VIIb, VIII, IX and X, and specific examples include cobalt, iron, nickel, manganese, ruthenium, zinc, copper, palladium, platinum, iridium, rhenium, osmium, and the Rcan be same or different selected from hydrogen, alkyl, alkoxy, fluoroalkyl and alkoxy, cycloaliphatic, and aryl.

Organometallic complexes and their use as precursors to deposit metal films

A process for depositing porous silicon oxide-based films using a sol-gel approach utilizing a precursor solution formulation which includes a purified nonionic surfactant and an additive among other components, where the additive is either an ionic additive or an amine additive which forms an ionic ammonium type salt in the acidic precursor solution. Using this precursor solution formulation enables formation of a film having a dielectric constant less than 2.5, appropriate mechanical properties, and minimal levels of alkali metal impurities. In one embodiment, this is achieved by purifying the surfactant and adding ionic or amine additives such as tetraalkylammonium salts and amines to the stock precursor solution. In some embodiments, the ionic additive is a compound chosen from a group of cationic additives of the general composition [NR(CH)]A, where R is a hydrophobic ligand of chain length 1 to 24, including tetramethylammonium and cetyltrimethylammonium, and Ais an anion, which may be chosen from the group consisting essentially of formate, nitrate, oxalate, acetate, phosphate, carbonate, and hydroxide and combinations thereof. Tetramethylammonium salts, or more generally tetraalkylammonium salts, or tetraorganoammonium salts or organoamines in acidic media are added to surfactant templated porous oxide precursor formulations to increase the ionic content, replacing alkali ion impurities (sodium and potassium) removed during surfactant purification, but which are found to exhibit beneficial effects in promoting the formation of the resulting dielectric.

A process for depositing porous silicon oxide-based films using a sol-gel approach utilizing a precursor solution formulation which includes a purified nonionic surfactant and an additive among other components, where the additive is either an ionic additive or an amine additive which forms an ionic ammonium type salt in the acidic precursor solution. Using this precursor solution formulation enables formation of a film having a dielectric constant less than 2.5, appropriate mechanical properties, and minimal levels of alkali metal impurities. In one embodiment, this is achieved by purifying the surfactant and adding ionic or amine additives such as tetraalkylammonium salts and amines to the stock precursor solution. In some embodiments, the ionic additive is a compound chosen from a group of cationic additives of the general composition &lsqb;NR(CH ) &rsqb; A , where R is a hydrophobic ligand of chain length 1 to 24, including tetramethylammonium and cetyltrimethylammonium, and A is an anion, which may be chosen from the group consisting essentially of formate, nitrate, oxalate, acetate, phosphate, carbonate, and hydroxide and combinations thereof. Tetramethylammonium salts, or more generally tetraalkylammonium salts, or tetraorganoammonium salts or organoamines in acidic media are added to surfactant templated porous oxide precursor formulations to increase the ionic content, replacing alkali ion impurities (sodium and potassium) removed during surfactant purification, but which are found to exhibit beneficial effects in promoting the formation of the resulting dielectric.

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Vista, CA, United States of America

Hareesh Thridandam