Applied Materials, Inc.

Carnegie Mellon University

Haosheng Wu

Shou-Sung Chang

Jianshe Tang

Hari N Soundararajan

Paul D Butterfield

Chih Chung Chou

Alexander John Fisher

Chad Pollard

Hui Chen

Yen-Chu Yang

Brian J Brown

Hui W Chen

Stephen Jew

Bum Jick Kim

Jeonghoon Oh

Taketo Sekine

Rajeev Bajaj

Benjamin Cherian

Wei Guang Lu

Shih-Haur Shen

Ningzhuo Cui

Calvin Lee

Harry Q Lee

Jun Qian

Kun Xu

You Wang

Hassan G Iravani

Christopher J Bettinger

Jonathan Paul Domin

Dmitry Sklyar

Andrew Siordia

Balasubramaniam Coimbatore Jaganathan

Shuchivrat Datar

Patrick A Higashi

Christopher Lai

Eric T Wu

Congcong Zhu

Chih Chung

A chemical mechanical polishing assembly includes a chemical mechanical polishing system, a fluid source, and a fluid delivery conduit to carry a fluid from the fluid source into the chemical mechanical polishing system. The polishing system has a platen to support a polishing pad, a carrier head to support a substrate and bring the substrate into contact with the polishing pad, and a motor to cause relative motion between platen and the carrier head. The fluid delivery conduit includes a conductive wire extending through an interior of the conduit to flow electrostatic discharge to a ground, and a wire extraction fitting covering and sealing a location where the conductive wire passes through a wall of the fluid delivery conduit.

Grounding techniques for ESD polymeric fluid lines

A polishing system includes a platen to hold a polishing pad, a carrier head to hold a substrate against the polishing pad, a conditioner including a conditioner head to hold a conditioner disk against the polishing pad, a motor to move the conditioner head laterally movable relative to the platen, a conditioning disk cleaning station positioned adjacent the platen to clean the conditioning disk, and a controller configured to cause the motor to, during polishing of the substrate, move the conditioner head back and forth between a first position with the conditioner head over the polishing pad and a second position with the conditioner head in the conditioner disk cleaning station.

In-situ conditioner disk cleaning during CMP

An apparatus for steam treatment of a conditioner head and/or conditioner disk in a chemical mechanical polishing system includes a conditioner cleaning cup, a boiler to generate steam, one or more nozzles positioned to direct steam inwardly into a cavity defined by the load cup, and a supply line running from the boiler to the one or more nozzles to supply steam to the one or more nozzles.

Steam treatment stations for chemical mechanical polishing system

A chemical mechanical polishing system includes a platen to support a polishing pad having a polishing surface, a conduit having an inlet to be coupled to a gas source, and a dispenser coupled to the conduit and having a convergent-divergent nozzle suspended over the platen to direct gas from the gas source onto the polishing surface of the polishing pad.

Method for CMP temperature control

A body is brought into contact with a polishing pad of a polishing system, a polishing liquid is supplied to the polishing pad, relative motion between the body and the polishing pad is generated while the body contacts the polishing pad, a signal from an in-situ eddy current monitoring system during the relative motion while the body contacts the polishing pad, generating, and mechanical vibrations in the polishing system are detected based on a signal from the in-situ eddy current monitoring system.

Eddy current monitoring to detect vibration in polishing

A polishing assembly includes a chemical mechanical polishing system, a fluid source, and a fluid delivery conduit to carry a fluid from the fluid source into the chemical mechanical polishing system. The chemical mechanical polishing system including a platen to support a polishing pad, a carrier head to support a substrate and bring the substrate into contact with the polishing pad, and a motor to cause relative motion between platen and the carrier head. The fluid delivery conduit includes electrically insulative tubing, a conductive wrapper wrapped around an outer diameter of the tubing from a first end of the tubing to a second end of the tubing, and a conductive wire attached to the conductive wrapper first end. The conductive wrapper is configured to conduct an electrostatic discharge, and the conductive wire is configured to conduct the electrostatic discharge from the conductive wrapper to a grounding source.

Insulated fluid lines in chemical mechanical polishing

A chemical mechanical polishing apparatus includes a platen to hold a polishing pad, a carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, and a temperature control system including a source of a fluid medium and one or more openings positioned over the platen and separated from the polishing pad and configured for the fluid medium to flow onto the polishing pad to heat or cool the polishing pad.

Apparatus and method for CMP temperature control

Fluid-tight electrical connection techniques for semiconductor processing

A chemical mechanical polishing system includes a support to hold a polishing pad, a carrier head to hold a substrate against the polishing pad during a polishing process, an in-situ monitoring system configured to generate a signal indicative of an amount of material on the substrate, a temperature control system to control a temperature of the polishing process, and a controller coupled to the in-situ monitoring system and the temperature control system. The controller is configured to cause the temperature control system to vary the temperature of the polishing process in response to the signal.

Temperature control of chemical mechanical polishing

The present disclosure relates to a method and apparatus for cleaning a substrate. The method includes rotating a substrate disposed on a substrate support and spraying a front side of the substrate using steam through a front side nozzle assembly. A back side of the substrate is sprayed using steam through a back side dispenser assembly. A heated chemical is dispensed over the front side of the substrate.

Steam-assisted single substrate cleaning process and apparatus

An apparatus for chemical mechanical polishing includes a rotatable platen having a surface to support a polishing pad, a carrier head to hold a substrate in contact with the polishing pad, and a polishing liquid distribution system. The polishing liquid distribution system includes a dispenser positioned to deliver a polishing liquid to a portion of a polishing surface of the polishing pad, and a curved barrier positioned after the dispenser to spread fresh polishing liquid from the dispenser.

Slurry distribution device for chemical mechanical polishing

A chemical mechanical polishing system includes a platen to support a polishing pad having a polishing surface, a source of coolant, a dispenser having one or more apertures suspended over the platen to direct coolant from the source of coolant onto the polishing surface of the polishing pad; and a controller coupled to the source of coolant and configured to cause the source of coolant to deliver the coolant through the nozzles onto the polishing surface during a selected step of a polishing operation.

Low-temperature metal CMP for minimizing dishing and corrosion, and improving pad asperity

Growing community of inventors

Santa Clara, CA, United States of America

Haosheng Wu