Mattson Technology, Inc

Beijing E-town Semiconductor Technology, Co., Ltd

Haochen Li

Michael Xiaoxuan Yang

Hua Chung

Xinliang Lu

Ting Xie

Qi Zhang

Shawming Ma

Haichun Yang

Systems and methods for thermal treatment of a workpiece are provided. In one example, a method for conducting a treatment process on a workpiece, such as a thermal treatment process, an annealing treatment process, an oxidizing treatment process, or a reducing treatment process in a processing apparatus is provided. The processing apparatus includes a plasma chamber and a processing chamber. The plasma chamber and the processing chamber are separated by a plurality of separation grids or grid plates. The separation grids or grid plates operable to filter ions generated in the plasma chamber. The processing chamber has a workpiece support operable to support a workpiece.

Methods for the treatment of workpieces

Processes for surface treatment of a workpiece are provided. In one example implementation, organic radicals (e.g., methyl CHradicals) can be generated by exciting and/or dissociating hydrogen and/or inert gas (e.g., Ar, He, etc) molecules in a remote plasma source and a subsequent reaction with organic molecule (alkanes and alkenes). The organic radicals (e.g., methyl CHradicals) can be exposed to the silicon and/or silicon germanium surfaces. After exposure to the organic radicals, the silicon and/or silicon germanium surfaces can be stable in air for a time period (e.g., days) with reduced surface oxidation such that the silicon and/or silicon germanium surfaces can be effectively protected from oxidation. As such, native surface oxide removal process before subsequent process steps can be eliminated.

Integration of materials removal and surface treatment in semiconductor device fabrication

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Haochen Li