Taiwan Semiconductor Manufacturing Comp. Ltd.

Hao-Yu Lan

Po-Chung Cheng

Tzung-Chi Fu

Tsung-Yen Lee

Ching-Juinn Huang

A system is provided. The system includes an exposing device configured to generate a real-time image, including multiple first align marks, of a mask and an adjusting device configured to adjust an off-set of the mask from a pre-determined position to be smaller than a minimum aligning distance according to the first align marks and multiple align marks on a substrate, and further to move the mask closer to the pre-determined position to have a displacement, less than a minimum mapping distance, from the pre-determined position according to the real-time image and a reference image of the mask.

Lithography system and method

A system is disclosed. The system includes a cleaning device and a scanner device. The cleaning device is configured to clean a mask. The scanner device is coupled to the cleaning device and is configured to receive the mask, a reference image and a real-time image that is captured at the mask. The reference image includes at least one first mark image having a plurality of mapping marks on the mask. The real-time image includes at least one second mark image having the plurality of mapping marks on the mask. The scanner device is configured to map the at least one second mark image in the real-time image with the at least one first image in the reference image, when a lithography exposing process is performed. A method is also disclosed herein.

A method includes the following operations. A reference image of a mask having a plurality of mapping marks is acquired. A lithography exposing process is performed by a scanner with the mask to a photoresist layer which is formed on a substrate. Performing the lithography exposing process includes mapping a real-time image of the mask with the reference image of the mask.

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Taipei, Taiwan

Hao-Yu Lan