Taiwan Semiconductor Manufacturing Comp. Ltd.

Hao-Wen Ko

Tsang-Jiuh Wu

Ken-Yu Chang

Ping-Jung Wu

A method includes bonding a top die to a bottom die, depositing a first dielectric liner on the top die, and depositing a gap-fill layer on the first dielectric liner. The gap-fill layer has a first thermal conductivity value higher than a second thermal conductivity value of silicon oxide. The method further includes etching the gap-fill layer and the first dielectric liner to form a through-opening, wherein a metal pad in the bottom die is exposed to the through-opening, depositing a second dielectric liner lining the through-opening, filling the through-opening with a conductive material to form a through-via connecting to the metal pad, and forming a redistribution structure over and electrically connecting to the top die and the through-via.

Growing community of inventors

Hsinchu, Taiwan

Hao-Wen Ko