Epistar Corporation

Hao-Chun Liang

Shih-Chang Lee

Yao-Ning Chan

Hui-Fang Kao

Yi-Ming Chen

Wei-Shan Yeoh

The present disclosure provides a semiconductor device and a semiconductor component. The semiconductor device includes an active structure, a ring-shaped semiconductor contact layer, a first electrode, and an insulating layer. The active structure has a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer located between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer. The ring-shaped semiconductor contact layer is located on the second-conductivity-type semiconductor layer and having a first inner sidewall and a first outer sidewall. The first electrode has an upper surface and covers the ring-shaped semiconductor contact layer. The insulating layer covers the first electrode and the active structure and has a second inner sidewall and a second outer sidewall. The first inner sidewall is not flush with the second inner sidewall in a vertical direction.

Semiconductor device and semiconductor component

Light emitting diode

Light-emitting diode

Growing community of inventors

Hsinchu, Taiwan

Hao-Chun Liang