Carl-zeiss-smt Ag

Carl Zeiss Smt Gmbh

Carl Zeiss Sms Ltd.

Hans-Jürgen Mann

Erik Roelof Loopstra

Udo Dinger

Wilhelm Ulrich

Russell M Hudyma

Wolfgang Singer

Johannes Ruoff

Toralf Gruner

David R Shafer

Christoph Husemann

Bernhard Kneer

Johann Trenkler

Alexander Epple

Aurelian Dodoc

Ulrich Matejka

Martin Lowisch

Sascha Perlitz

Andreas Kirchner

Michael Totzeck

Martin Endres

Susanne Beder

Alois Herkommer

Berndt Warm

Johannes Zellner

Udo Nothelfer

Olaf Dittmann

Jens Timo Neumann

Danny Chan

Wolfgang Harnisch

Marco Wedowski

Dieter Pauschinger

Sascha Migura

Axel Zibold

Thomas Engel

Wolfgang Reinecke

Michael Schottner

Michael Mühlbeyer

Ralf Müller

Günther Seitz

Rudolf Von BÜNAU

In a method for three-dimensionally measuring a 3D aerial image in the region around an image plane during the imaging of a lithography mask, which is arranged in an object plane, a selectable imaging scale ratio in mutually perpendicular directions (x, y) is taken into account. For this purpose, an electromagnetic wavefront of imaging light is reconstructed after interaction thereof with the lithography mask. An influencing variable that corresponds to the imaging scale ratio is included. Finally, the 3D aerial image measured with the inclusion of the influencing variable is output. This results in a measuring method with which lithography masks that are optimized for being used with an anamorphic projection optical unit during projection exposure can also be measured.

Method for three-dimensionally measuring a 3D aerial image of a lithography mask

An imaging optical unit serves within a metrology system for examining a lithography mask. The lithography mask can be arranged in an object field of the imaging optical unit. The object field is defined by two mutually perpendicular object field coordinates. The imaging optical unit has an aperture stop of which the aspect ratio in the direction of the two object field coordinates differs from 1. This results in an imaging optical unit which can be used for the examination of lithography masks that are designed for projection exposure with an anamorphic projection optical unit.

Imaging optical unit for a metrology system for examining a lithography mask

A metrology system serves to examine an object arranged in an object field using EUV illumination light. An illumination optics of the metrology system has a collector mirror which is arranged in the beam path directly downstream of an EUV light source. Downstream of the collector mirror, less than three additional illumination mirrors are arranged in the beam path between the collector mirror and the object field. An intermediate focus is arranged in the beam path between the collector mirror and the additional illumination mirror. The metrology system further includes a magnifying imaging optics for imaging the object field into an image field in an image plane. As a result a metrology system is obtained which comprises an illumination optics that ensures an efficient illumination of the object field by means of illumination parameters which are well adapted to the illumination situation of current EUV projection exposure apparatuses.

Illumination optics for a metrology system for examining an object using EUV illumination light and metrology system comprising an illumination optics of this type

The invention relates to a projection exposure system, in particular for micro-lithography. The projection exposure system according to the invention comprises a light source for producing light in the EUV region. The projection exposure system further comprises a first optical system for illuminating a mask by the light of the light source and a second optical system for imaging the mask on a component. At least one polarization-optical element is disposed on the beam path between the light source and the component.

Projection exposure system, method for manufacturing a micro-structured structural member by the aid of such a projection exposure system and polarization-optical element adapted for use in such a system

A reflective optical element and an EUV lithography appliance containing one such element are provided, the appliance displaying a low propensity to contamination. The reflective optical element has a protective layer system includes at least two layers. The optical characteristics of the protective layer system are between those of a spacer and an absorber, or correspond to those of a spacer. The selection of a material with the smallest possible imaginary part and a real part which is as close to 1 as possible in terms of the refractive index leads to a plateau-type reflectivity course according to the thickness of the protective layer system between two thicknesses dand d. The thickness of the protective layer system is selected in such a way that it is less than d.

Reflective optical element and EUV lithography appliance

A reflective optical element and an EUV lithography appliance containing one such element are provided, the appliance displaying a low propensity to contamination. The reflective optical element has a protective layer system consisting of at least one layer. The optical characteristics of the protective layer system are between those of a spacer and an absorber, or correspond to those of a spacer. The selection of a material with the smallest possible imaginary part and a real part which is as close to 1 as possible in terms of the refractive index leads to a plateau-type reflectivity course according to the thickness of the protective layer system between two thicknesses dand d. The thickness of the protective layer system is selected in such a way that it is less than d.

In general, in one aspect, the invention features an objective arranged to image radiation from an object plane to an image plane, including a plurality of elements arranged to direct the radiation from the object plane to the image plane, wherein the objective has an image side numerical aperture of more than 0.55 and a maximum image side field dimension of more than 1 mm, and the objective is a catoptric objective.

Catoptric objectives and systems using catoptric objectives

There is provided a reflective X-ray microscope for examining an object in an object plane. The reflective X-ray microscope includes (a) a first subsystem, having a first mirror and a second mirror, disposed in a beam path from the object plane to the image plane, and (b) a second subsystem, having a third mirror, situated downstream of the first subsystem in the beam path. The object is illuminated with radiation having a wavelength &#x3c;100 nm, and the reflective X-ray microscope projects the object with magnification into an image plane.

Reflective X-ray microscope and inspection system for examining objects with wavelengths &#x3c;100 nm

For the correction of anamorphism in the case of a projection lens of an EUV projection exposure apparatus for wafers it is proposed to tilt the reticle bearing the pattern to be projected and preferably also the wafer by a small angle about an axis that is perpendicular to the axis A of the lens and perpendicular to the scan direction and that in each instance passes through the middle of the light field generated on the reticle or on the wafer. For the correction of a substantially antisymmetric quadratic distortion the reticle and/or the substrate is instead rotated about an axis of rotation that is disposed at least approximately parallel to an optical axis of the projection lens.

Method for distortion correction in a microlithographic projection exposure apparatus

An objective and method of fabricating an objective, particularly a projection objective for microlithography, comprising a plurality of optical elements. In one example, the method comprises acts of determining groups of optically similar optical elements or surfaces having at least two members, determining wave front deformations by the optical elements or surfaces, determining the necessary corrections for the optical elements or surfaces of a group, and performing the corrections for a group at a group member.

Groupwise corrected objective

A mask having a multilayer coating of a specified period thickness distribution such as those used in lithography devices for producing semiconductor components. One problem of projection optics concerns pupil apodization which leads to imaging defects. As here proposed, the period thickness in the mask plane is selected so that it is greater than the period thickness for maximum reflectivity. As a result, not only does the apodization over the pupil become more symmetric but the intensity variation also becomes smaller overall.

Masks, lithography device and semiconductor component

There is provided an EUV optical projection system. The system includes a first mirror, a second mirror, a third mirror, a fourth mirror, a fifth mirror, and a sixth mirror situated in an optical path from an object plane to an image plane, for imaging an object in said object plane into an image in said image plane. The image has a width W and a secant length SL, and the width W is greater than about 2 mm.

Projection system for EUV lithography

An EUV optical projection system includes at least six reflecting surfaces for imaging an object (OB) on an image (IM). The system is preferably configured to form an intermediate image (IMI) along an optical path from the object (OB) to the image (IM) between a secondary mirror (M) and a tertiary mirror (M), such that a primary mirror (M) and the secondary mirror (M) form a first optical group (G) and the tertiary mirror (M), a fourth mirror (M), a fifth mirror (M) and a sixth mirror (M) form a second optical group (G). The system also preferably includes an aperture stop (APE) located along the optical path from the object (OB) to the image (IM) between the primary mirror (M) and the secondary mirror (M). The secondary mirror (M) is preferably concave, and the tertiary mirror (M) is preferably convex. Each of the six reflecting surfaces preferably receives a chief ray (CR) from a central field point at an incidence angle of less than substantially 15&#xb0;. The system preferably has a numerical aperture greater than 0.18 at the image (IM). The system is preferably configured such that a chief ray (CR) converges toward the optical axis (OA) while propagating between the secondary mirror (M) and the tertiary mirror (M).

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Oberkochen, Germany

Hans-Jürgen Mann