Merck Patent Gesellschaft MIT Beschrankter Haftung

Ciba-geigy Corporation

Hans J Merrem

Rudolf Klug

Horst Binder

Thomas Herold

Raimund Sindlinger

Klaus P Thiel

Addition of compounds of formula I ##STR1## in which R.sup.1 to R.sup.4 are each hydroxyl or C.sub.1-6 -alkoxy and R.sup.5 to R.sup.10 are each hydrogen or C.sub.1-6 -alkyl, to positive photoresist compositions based on a diazoquinone/novolak resin effectively suppresses stray radiation and halation effects in corresponding photoresist coatings, in particular if these coatings have been applied to highly reflective substrates.

Process of photopatterning a substrate with a positive photoresist

Positive diazo quinone photoresist compositions containing antihalation

Stabilized solutions of radiation-crosslinkable polymer precursors of highly heat-resistant polymers, containing chelate complex-formers as stabilizers, do not tend to gel through premature crosslinking and can thus be stored and used over a long period.

Stabilized solutions of radiation-crosslinkable polymer precursors of

Photoresist formulations for forming relief structures from highly heat-resistant polyimide polymers, containing in an organic solvent in essence at least

Polyamide ester photoresist formulations of enhanced sensitivity

A process for the production of photoresist relief structures possessing an overhang character comprising coating a substrate with a positive-working photoresist composition based on phenol/formaldehyde condensates of the novolak resin type and photosensitive o-quinonediazide compounds, imagewise overexposure of the photoresist layer at an energy exceeding that required to produce relief structures with a 90.degree. angle between the photoresist compound and the substrate, and treatment of the overexposed layer and substrate with a buffered, aqueous, alkaline developer containing 1-100 ppm of an oxyethylated alkylphenol as a non-ionic surfactant.

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Seeheim, Germany

Hans J Merrem