International Business Machines Corporation

Hanfei Wang

William L Nicoll

Michael A Guillorn

Kangguo Cheng

Ali Khakifirooz

Veeraraghavan S Basker

Reinaldo Ariel Vega

Ravikumar Ramachandran

Byeong Yeol Kim

Xinhui Wang

Gregory Costrini

Michael Vincent Aquilino

A method for forming a semiconductor device comprising forming a stack of nanowires, the stack including a first nanowire having a first length, and a second nanowire having a second length, the second nanowire arranged above the first nanowire, forming a sacrificial gate stack on the stack of nanowires, growing a source/drain region on the first, second nanowires, removing the sacrificial gate stack to expose channel regions of the first and second nanowires, and forming a gate stack over the channel regions.

Stacked nanowire semiconductor device

After forming a laterally contacting pair of a semiconductor fin and a conductive strap structure having a base portion vertically contacting a deep trench capacitor embedded in a substrate and a fin portion laterally contacting the semiconductor fin, conducting spikes that are formed on the sidewalls of the deep trench are removed or pushed deeper into the deep trench. Subsequently, a dielectric cap that inhibits epitaxial growth of a semiconductor material thereon is formed over at least a portion of the base portion of the conductive strap structure. The dielectric cap can be formed either over an entirety of the base portion having a stepped structure or on a distal portion of the base portion.

Structure and method to prevent EPI short between trenches in FinFET eDRAM

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White Plains, NY, United States of America

Hanfei Wang