Ulvac Technologies, Inc.

Massachusetts Institute of Technology

Infineon Technologies Richmond, LP

Han Xu

Richard L Bersin

Herbert H Sawin

Andrew Scott Lawing

Jane P Chang

Zhe Zhang

Phillip Gerard Clark, Jr

Yukio Masuda

Izumi Nakayama

Amy Ying Shen

Quain Geng

Dry polymer and oxide veil removal for post etch cleaning

Metals removal process

In a microwave downstream process, a microwave plasma is formed from a gas that has a small quantity of fluorine to enhance ashing without substantial oxide loss. This process can be performed before or after other microwave downstream processes or reactive ion etching processes.

Cleaning and stripping of photoresist from surfaces of semiconductor

A method for removing a resist layer, particularly in via holes, includes plasma to remove organic compounds, rinsing the device in deionized water, and sputtering with argon to remove inorganic compounds. The order of rinsing and sputtering can be reversed. These methods avoid the use of acids and industrial solvents.

Processes for cleaning and stripping photoresist from surfaces of

A method for removing a resist layer includes an RIE process and a downstream microwave process, each performed such that the temperature of the wafer is no greater than about 60.degree. C. By performing these processes cold, the resist need not be pre-heated to drive off solvents. The RIE process and the microwave process can be performed sequentially or simultaneously.

Cold processes for cleaning and stripping photoresist from surfaces of

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Han Xu