Entegris, Inc.

Han Wang

Thomas H Baum

Bryan Clark Hendrix

Philip S H Chen

Robert Wright, Jr

Shawn D Nguyen

Eric Condo

Gavin Richards

Described are vapor deposition methods for depositing metal films or layers onto a substrate, wherein the metal is molybdenum or tungsten; the methods involve organometallic precursor compounds that contain the metal and one or more carbon-containing ligands, and include depositing a metal layer formed from the metal of the precursor, onto a substrate, followed by introducing oxidizer to the formed metal layer.

Methods for depositing tungsten or molybdenum films

Provided is improved methodology for the nucleation of certain metal nitride substrate surfaces utilizing certain silicon-containing halides, silicon-containing amides, and certain metal precursors, in conjunction with nitrogen-containing reducing gases. While utilizing a pretreatment step, the methodology shows greatly improved nucleation wherein a microelectronic device substrate having such a metal nitride film deposited thereon has a thickness of about 10 Å to about 15 Å and less than about 1% of void area. Once such nucleation has been achieved, traditional layer-upon-layer deposition can rapidly take place.

Method for nucleation of conductive nitride films

Certain embodiments of the invention utilize low temperature atomic layer deposition methodology to form material containing silicon and nitrogen (e.g., silicon nitride). The atomic layer deposition uses silicon tetraiodide (SiI) or disilicon hexaiodide (SiI) as one precursor and uses a nitrogen-containing material such as ammonia as another precursor. In circumstances where a selective deposition of silicon nitride is desired to be deposited over silicon dioxide, the substrate surface is first treated with ammonia plasma.

Selective deposition of silicon nitride

Growing community of inventors

Cromwell, CT, United States of America

Han Wang