Growing community of inventors

Los Altos, CA, United States of America

Han-Rei Ma

Average Co-Inventor Count = 4.33

ph-index = 9

The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.

Forward Citations = 256

Han-Rei MaPeter Wung Lee (19 patents)Han-Rei MaFu-Chang Hsu (19 patents)Han-Rei MaHsing-Ya Tsao (18 patents)Han-Rei MaKoucheng Wu (9 patents)Han-Rei MaHan-Rei Ma (19 patents)Peter Wung LeePeter Wung Lee (164 patents)Fu-Chang HsuFu-Chang Hsu (132 patents)Hsing-Ya TsaoHsing-Ya Tsao (79 patents)Koucheng WuKoucheng Wu (17 patents)
..
Inventor’s number of patents
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Strength of working relationships

Company Filing History:

1. Aplus Flash Technology, Inc. (16 from 110 patents)

2. Other (1 from 832,880 patents)

3. Abedneja Assetts Ag L.l.c. (1 from 1 patent)

4. Abedneja Assets Ag L.l.c. (1 from 1 patent)


19 patents:

1. 8455923 - Embedded NOR flash memory process with NAND cell and true logic compatible low voltage device

2. 8237212 - Nonvolatile memory with a unified cell structure

3. 7915092 - Nonvolatile memory with a unified cell structure

4. 7636252 - Nonvolatile memory with a unified cell structure

5. 7372736 - Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout

6. 7349257 - Combination nonvolatile memory using unified technology with byte, page and block write and simultaneous read and write operations

7. 7339824 - Combination nonvolatile memory using unified technology with byte, page and block write and simultaneous read and write operations

8. 7324384 - Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout

9. 7289366 - Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout

10. 7283401 - Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout

11. 7154783 - Combination nonvolatile memory using unified technology with byte, page and block write and simultaneous read and write operations

12. 7149120 - Combination nonvolatile memory using unified technology with byte, page and block write and simultaneous read and write operations

13. 7120064 - Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout

14. 7110302 - Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout

15. 7102929 - Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout

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as of
1/5/2026
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