Macronix International Co., Ltd.

Han-Hui Hsu

Shih-Ping Hong

Ming-Tsung Wu

Chun-Min Cheng

Yu-Chung Chen

An-Chi Wei

Ta-Hung Yang

Kuo-Liang Wei

Ching-Hsiung Li

A patterning method is provided. First, a substrate having an objective material layer thereon is provided. Thereafter, a mask layer is formed on the objective material layer. Afterwards, a patterned layer is formed over the mask layer, wherein a material of the patterned layer includes a metal-containing substance. Then, the mask layer is patterned to form a patterned mask layer. Further, the objective material layer is patterned, using the patterned mask layer as a mask.

Patterning method

An isolation structure comprising a substrate is provided. A trench is in the substrate. A sidewall of the trench has a first inclined surface and a second inclined surface. The first inclined surface is located on the second inclined surface. The slope of the first inclined surface is different from the slope of the second inclined surface. A length of the first inclined surface is greater than 15 nanometers.

Isolation structure and formation method thereof

A method of fabricating metal film stacks is described that reduces or eliminates adverse effects of photolithographic misalignments. A bottom critical dimension is increased by removal of a bottom titanium nitride barrier.

Fabrication of metal film stacks having improved bottom critical dimension

A method for forming a dielectric is provided. The method includes providing a substrate having a silicon-containing semiconductor layer within a process chamber. The process chamber is capable of ionizing a process precursor to a plasma comprising an oxygen-containing element and a fluorocarbon-containing element. A surface portion of the silicon-containing material is oxidized by using the plasma to convert the surface portion into an oxidized dielectric material.

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Tainan, Taiwan

Han-Hui Hsu