Industrial Technology Research Institute

Han-Chung Lai

Hung-Wen Chiou

A new method is provided to edge and bevel the periphery of a semiconductor substrate. The wafer is positioned in a horizontal plane and held in place against two positioning pegs. The wafer is rotated and slurry is distributed over the periphery of the substrate surface. The periphery of the wafer is entered into one or more abrasive fixtures, also referred to as bevel/edge heads. These abrasive fixtures will create the desired edge and the desired bevel around the periphery of the substrate.

Edge and bevel CMP of copper wafer

The present invention provides three embodiments to deposit layers over a substrate using ultrasound energy to vibrate the substrate during (1) PVD or CVD deposition, (2) anneal or (3) plating deposition. The first embodiment deposits a first layer over a substrate using ultrasonic energy to vibrate the substrate. The ultrasound allows the layer to deposit more conformal over opening sidewalls and decreases overhangs and voids. The second embodiment involves using ultrasonic vibrations during annealing or RTA. The ultrasound smooches out barrier/seed/conductive layers in contact holes. The third embodiment is a method of plating a metal layer such as Cu over a substrate while vibrating the substrate with ultrasonic waves. The substrate is vibrated with ultrasound waves in vertical or horizontal direction. The ultrasonic vibration allow the metal to plate in small contact holes with improved step coverage.

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Tauryuan, Taiwan

Han-Chung Lai