Screen Holdings Co., Ltd.

Hajime Nishide

Kenji Kobayashi

Sei Negoro

Atsuyasu Miura

Kazuhiro Fujita

Hiroki Tsujikawa

Koichi Okamoto

Takashi Izuta

Katsuhiro Fukui

Takatoshi Hayashi

Takao Matsumoto

Kwichang Kang

In a substrate processing apparatus (), above a plurality of processing parts () arrayed in an up-and-down direction, arranged are a plurality of collecting pipes (to). The plurality of collecting pipes (to) correspond to a plurality of fluid classifications, respectively. Further, provided are a plurality of exhaust pipes () extending upward from the plurality of processing parts (), into which exhaust gases from the processing parts () flow, respectively. At an upper end portion of each of the exhaust pipes (), provided is a flow path switching part () which connects the upper end portion to the plurality of collecting pipes (to) and switches a flow path of the exhaust gas flowing in the exhaust pipe () among the plurality of collecting pipes (to).

Substrate processing apparatus

A chemical liquid preparation method of preparing a TMAH-containing chemical liquid, including, a correspondence relationship preparing step of preparing a correspondence relationship between a supply flow rate ratio between an oxygen-containing gas and an inert-gas-containing gas and a convergent dissolved oxygen concentration in the TMAH-containing chemical liquid that is converged to when the oxygen-containing gas and the inert-gas-containing gas are supplied into the TMAH-containing chemical liquid; a concentration setting step of setting a target dissolved oxygen concentration in the TMAH-containing chemical liquid; a supply-flow-rate-ratio acquiring step of acquiring the supply flow rate ratio between the oxygen-containing gas and the inert-gas-containing gas corresponding to the target dissolved oxygen concentration in accordance with the correspondence relationship prepared in the correspondence relationship preparing step; and a gas supplying step of supplying the oxygen-containing gas and the inert-gas-containing gas with the supply flow rate ratio acquired in the supply-flow-rate-ratio acquiring step.

Chemical liquid preparation device, and substrate processing device

A chemical liquid preparation method of preparing a chemical liquid for treating a film formed on a substrate, including a gas dissolving process in which an oxygen-containing gas and an inert-gas-containing gas are dissolved in the chemical liquid by supplying the oxygen-containing gas which contains oxygen gas and the inert-gas-containing gas which contains an inert gas to a chemical liquid, wherein in the gas dissolving process, a dissolved oxygen concentration in the chemical liquid is adjusted by setting a mixing ratio between the oxygen-containing gas and the inert-gas-containing gas supplied to the chemical liquid as a mixing ratio corresponding to a predetermined target dissolved oxygen concentration.

In a substrate processing apparatus (), above a plurality of processing parts () arrayed in an up-and-down direction, arranged are a plurality of collecting pipes (a toc). The plurality of collecting pipes (a toc) correspond to a plurality of fluid classifications, respectively. Further, provided are a plurality of exhaust pipes () extending upward from the plurality of processing parts (), into which exhaust gases from the processing parts () flow, respectively. At an upper end portion of each of the exhaust pipes (), provided is a flow path switching part () which connects the upper end portion to the plurality of collecting pipes (a toc) and switches a flow path of the exhaust gas flowing in the exhaust pipe () among the plurality of collecting pipes (a toc). In the substrate processing apparatus (), it is possible to reduce a pressure loss in the exhaust pipe () and reduce a footprint.

Chemical liquid preparation method, chemical liquid preparation device, and substrate processing device

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Kyoto, Japan

Hajime Nishide