Oc Oerlikon Balzers Ag

Oerlikon Trading Ag, Trubbach

Tel Solar Ag

Oerlikon Solar Ag, Trubbach

Hai Tran Quoc

Jerome Villette

Jérôme Villette

Alice Gallissian

Maryam Kharrazi-Olsson

A method for manufacturing a poly- or microcrystalline silicon layer on an insulator comprises a silicon containing insulator, growing a thin adhesion promoting layer comprising amorphous silicon onto it and further growing a poly- or microcrystalline silicon layer onto the adhesion promoting layer. Such a sequence of layers, deposited with a PECVD method, shows good adhesion of the poly- or microcrystalline silicon on the base and is advantageous in the production of semiconductors, such as thin film transistors.

Adhesion layer for thin film transistors

For avoiding the metallic inner surface of a PECVD reactor to influence thickness uniformity and quality uniformity of a &#x3bc;c-Si layer () deposited on a large-surface substrate, () before each substrate is single treated at least parts of the addressed wall are precoated with a dielectric layer ().

Method for manufacturing flat substrates

A diffusion barrier system for a display device comprising a layer system with at least two layers of dielectric material, wherein at least two adjacent layers of that layer system comprise the same material. A respective method for manufacturing such a diffusion barrier system in a single process chamber of a plasma deposition system has the steps of introducing a substrate to be treated in said process chamber, discretely varying in a controlled manner during deposition at least one process parameter in the process chamber, without completely interrupting such process parameter, which results in layers with different properties and finally unloading said substrate from said process.

Diffusion barrier layer and method for manufacturing a diffusion barrier layer

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Orsay, France

Hai Tran Quoc