Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.

Tu Dresden

Technische Universitát Dresden

Hagen Bartzsch

René De La Barré

Gerhard Schottner

Matthias Fahland

Arno Seeboth

Peter Frach

Rainer Labitzke

Detlef Lötzsch

Daniel Glöss

Christian Gottfried

Stephan Barth

Daniel Glöß

Jan Hildisch

Matthias Gittner

Christian Rabe

Johanna Fischer

Roland Bartmann

Kerstin Täschner

Michael VERGÖHL

Pierre Pötschick

A method is provided for depositing a layer on a substrate inside a vacuum chamber by a magnetron sputtering device comprising at least two magnetron cathodes, each equipped with one target, at least one additional electrode, wherein a separate power supply unit is allocated to each magnetron cathode and wherein, in addition to at least one working gas, at least one reactive gas is introduced into the vacuum chamber. In a first phase, a pulsed negative direct current voltage is conducted from each power supply unit to the corresponding magnetron cathode, wherein the power supply units are operated in the push-pull mode. In a second phase, the pulsed direct current voltages provided by the power supply units are switched between the corresponding magnetron cathode and the additional electrode. An electric voltage is applied to the substrate or an electrode at the back of the substrate.

Method for depositing a layer using a magnetron sputtering device

A method for depositing a piezoelectric film may be provided containing AlN on a substrate by means of magnetron sputtering of at least two targets&#x2014;of which at least one target contains aluminum&#x2014;within a vacuum chamber, into which a mixture of gases containing at least reactive nitrogen gas and an inert gas is introduced, and during which magnetron sputtering the unipolar pulse mode and the bipolar pulse mode are alternately used. A film may be provided containing AlN of formula AlNO, where (0.1&#x2264;X&#x2264;1.2); (0.1&#x2264;Y&#x2264;1.2) and (0.001&#x2264;Z&#x2264;0.1).

Method for depositing a piezoelectric film containing AIN, and a piezoelectric film containing AIN

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Dresden, Germany

Hagen Bartzsch