International Business Machines Corporation

H Ward Conru

Stephen G Starr

William C Ward

Gary H Irish

William J Slattery

Francis J Pakulski

Douglas W Phelps, Jr

Gordon C Osborne, Jr

Stephen E Gons

A lead frame having a plurality of metallic conductors with each conductor having a coined or stamped region near its proximal end but spaced therefrom to provide pressure points to assure substantial even joining of the conductor to semiconductor chip via an insulative adhesive medium. The lead frame, when mounted on the active face of a semiconductor chip, has wires connecting terminals on the major active surface of the semiconductor chip to the bands on selected lead frame conductors. The lead frame on the semiconductor chip and the wires which connect the semiconductor chip terminals to the bands of selected lead frame conductors are then encapsulated with a suitable insulative material to form a semiconductor module or package.

Semiconductor lead frame

This is a semiconductor chip in which the conductive path between the chip and the lead frame via wires can be easily and reproduceably improved. This is accomplished by improving the bond between the wires and the lead frame members to which the wires are joined and by creating additional contacts between each wire and its respective lead even if the bonded contact breaks or fails at or immediately adjacent to the bonding point. This is accomplished by placing an insulating layer on the active surface of each chip, carrying input and output bonding pads thereon, to which lead frame conductors have been connected by bonding wires. The insulating layer is a thermosetting adhesive and is placed over the lead frame, the bonding wires and the active face of the semiconductor chip so that when a lamination force is applied to the insulating layer the wires will be crushed and held against their respective pads and against the respective leads to which they are connected and the active face of the semiconductor protected by the adhesive bonding thereto. In this way greater contact between the wires and the leads is enhanced and defects or failure in conductivity therebetween reduced or eliminated.

Planarized thin film surface covered wire bonded semiconductor package

A method of making a semiconductor chip in which the conductive path between the chip and the lead frame via wires can be easily and reproduceably improved. This is accomplished by improving the bond between the wires and the lead frame members to which the wires are joined and by creating additional contacts between each wire and its respective lead even if the bonded contact breaks or fails at or immediately adjacent to the bonding point. This is accomplished by placing an insulating layer on the active surface of each chip, carrying input and output bonding pads thereon, to which lead frame conductors have been connected by bonding wires. The insulating layer is a thermosetting adhesive and is placed over the lead frame, the bonding wires and the active face of the semiconductor chip so that when a lamination force is applied to the insulating layer the wires will be crushed and held against their respective pads and against the respective leads to which they are connected and the active face of the semiconductor protected by the adhesive bonding thereto. In this way greater contact between the wires and the leads is enhanced and defects or failure in conductivity therebetween reduced or eliminated.

Method of making a planarized thin film covered wire bonded

A compression bond is formed between a gold or gold alloy wire and lead/tin solder by forming a head on the wire and forcing the head into a pad of the solder by thermosonic, or thermocompression, or ultrasonic compression bonding techniques. This forms a gold/tin intermetallic compound which in turn forms the bond. The head of the wire is maintained out of contact with any underlying surface, and surrounded by the solder.

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Essex Junction, VT, United States of America

H Ward Conru