Applied Materials, Inc.

H Peter Hey

Israel Beinglass

Roger N Anderson

Mahalingam Venkatesan

David K Carlson

Johanes F Swenberg

Vedapuram S Achutharaman

Gregory F Redinbo

James C Hann

David W Carlson

The present invention is a method and apparatus for depositing a film on a substrate. According to the present invention a characteristic of a substrate is determined. The substrate is then heated by heat from an upper heat source and heat from a lower heat source wherein the ratio of heat supplied from the upper heat source relative to the lower heat source is dependent upon the determined wafer characteristic.

Deposition rate control on wafers with varying characteristics

A method and apparatus for depositing a film on a substrate. According to the present invention a prewafer reaction layer is deposited onto a susceptor placed in the reaction chamber to form a prewafer reaction layer coated susceptor prior to film deposition. A deposition gas is then fed into the reaction chamber so that it flows over the prewafer reaction layer coated susceptor and the substrate to form a film on the prewafer reaction layer coated susceptor and the substrate.

Method and apparatus for improving film deposition uniformity on a

A method of in-situ cleaning a native oxide layer from the surface of a silicon wafer positioned in a vacuum chamber that is substantially free of oxidizing species by passing at least one non-oxidizing gas over the native oxide layer at a wafer cleaning temperature between about 650.degree. C. to about 1025.degree. C. for a sufficient length of time until such native oxide layer is removed.

Method for in-situ cleaning of native oxide from silicon surfaces

The present disclosure is directed to a process of depositing a layer of a material on a wafer, which comprises depositing a layer of the same material to be deposited on the wafer on the back surface of a susceptor.

Process of depositing a layer of material on a wafer with susceptor back

The present disclosure is directed to an apparatus for depositing a layer of a material on a wafer. The apparatus includes a deposition chamber having an upper dome, a lower dome and a side wall between the upper and lower domes. A susceptor plate is in and extends across the deposition chamber to divide the deposition chamber into an upper portion above the susceptor plate and a lower portion below the susceptor plate. An exhaust passage formed through the side wall and is coupled to an upper passage which extends to the upper portion of the deposition chamber and is coupled to a lower passage which extends to the lower portion of the deposition chamber.

Semiconductor wafer process chamber with susceptor back coating

The present disclosure is directed to an apparatus for depositing a layer of a material on a wafer. The apparatus includes a deposition chamber having an upper dome, a lower dome and a side wall between the upper and lower domes. A susceptor plate is in and extends across the deposition chamber to divide the deposition chamber into an upper portion above the susceptor plate and a lower portion below the susceptor plate. A gas inlet manifold is in the side wall. The manifold has three inlet ports. One of the ports is connected by passages which open into the lower portion of the deposition chamber. The other two ports are connected by passages which open into the upper portion of the deposition chamber. A gas supply system is connected to the inlet ports so as to provide the same gases into the lower portion of the deposition chamber as well as into the upper portion of the deposition chamber. This allows the back surface of the susceptor plate to be coated with a layer of the same material as to be coated on the wafer prior to coating the layer on the wafer.

Semiconductor wafer process chamber with suspector back coating

A process and apparatus for depositing silicon nitride on a substrate 28 is described. The substrate 28 is placed in a deposition zone 24 within a deposition chamber 22, and a process gas comprising a silicon containing gas and a nitrogen containing gas is introduced into the deposition zone 24 through an inlet gas conduit 30. The substrate 28 is heated to a temperature T.sub.d which is sufficiently high to cause the process gas to deposit silicon nitride on the substrate 28, and the resultant process gas byproducts are exhausted through an exhaust gas conduit 32. At least one of the inlet and exhaust gas conduits 30 and 32 are heated to a temperature T.sub.h within the range .DELTA.T.sub.h, wherein all the temperatures T.sub.h are sufficiently higher than T.sub.c the temperature at which process gas condenses in the gas conduits, so that substantially no condensate deposits in the gas conduits, and all the temperatures T.sub.h are sufficiently lower than the deposition temperature T.sub.d , so that substantially no silicon nitride deposits in the gas conduits.

Silicon nitride deposition

An improved method of etching or cleaning a cold-wall chemical vapor deposition chamber that is substantially moisture-free at a low chamber temperature and a low chamber pressure while maintaining a satisfactory etch rate by using at least one etchant gas selected from the group consisting of nitrogen trifluoride, chlorine trifluoride, sulfur hexafluoride, carbon tetrafluoride or the like and mixtures thereof.

Growing community of inventors

San Jose, CA, United States of America

H Peter Hey