Samsung Electronics Co., Ltd.

Gyuwan Choi

Dohyung Kim

Joon Hyuk Kim

Sejun Park

Mansug Kang

Jaihyung Won

Seonghwee Cheong

KiHong Nam

Sangho Roh

Eunsol Shin

Seung Moo Lee

A method of forming a hard mask layer on a substrate includes forming an amorphous carbon layer using nitrous oxide (NO). A source of carbon and the nitrous oxide (NO) are introduced to the substrate under a plasma ambient of an inert gas. The amorphous carbon layer has a nitrogen content ranging from about 0.05 at % to about 30 at % and an oxygen content ranging from about 0.05 at % to about 10 at %. In forming a semiconductor device, the hard mask layer is patterned, and a target layer beneath the hard mask layer is etched using the patterned hard mask layer as an etch mask.

Methods of forming a hard mask layer and of fabricating a semiconductor device using the same

A semiconductor device with vertical channel transistors and a method of fabricating the same are provided. A method of fabricating the semiconductor device includes patterning a substrate to form a trench that defines an active region, forming a sacrificial pattern in a lower region of the trench, forming a spacer on an upper sidewall of the trench, recessing a top surface of the sacrificial pattern to form a window exposing a sidewall of the active region between the spacer and the sacrificial pattern, doping a sidewall of the trench through the window to form a doped region in the active region, and forming a wiring in the trench to be connected to the doped region.

Semiconductor device with vertical channel transistor and method of fabricating the same

Growing community of inventors

Hwaseong-si, South Korea

Gyuwan Choi