Samsung Electronics Co., Ltd.

Adeka Corporation

Dnf Co., Ltd.

L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude

Gyu-Hee Park

Youn-Joung Cho

Jae-Soon Lim

Naoki Yamada

Younjoung Cho

Haruyoshi Sato

Akio Saito

Youn-soo Kim

Jaesoon Lim

Takanori Koide

Seung-min Ryu

Sang-Chul Youn

Younsoo Kim

Akihiro Nishida

Hiroyuki Uchiuzou

Kazuki Harano

Soyoung Lee

Masayuki Kimura

Joo-ho Lee

Atsushi Yamashita

Se Hoon Oh

Tsubasa Shiratori

Hyun-jun Kim

Yunjung Choi

Julien Lieffrig

Joong Jin Park

Sung-Woo Cho

Seung-Min Ryu

Youn Joung Cho

Jin-sun Lee

Myong-Woon Kim

Sang-Ick Lee

Byeong Il Yang

Yoshiki Manabe

Chin Moo Cho

Hee Yeon Jeong

Jun Hee Cho

Seongyul Park

Jae Hyoung Choi

Eun Hyea Ko

Jiyu Choi

Ji Yu Choi

Yangsun Park

Clement Lansalot

Won-tae Noh

Sung-duck Lee

A method of manufacturing a semiconductor device includes providing a metal precursor on a substrate, and providing a reactant and a co-reactant to form a metal nitride layer by reaction with the metal precursor, the reactant being a nitrogen source, the co-reactant being an organometallic compound represented by Chemical Formula 1:M2L)  [Chemical Formula 1]In Chemical Formula 1, M2 may be selected from Sn, In, and Ge, n may be 2, 3, or 4, and each Lmay independently be hydrogen, a halogen, or a group represented by Chemical Formula 2. In Chemical Formula 2, x may be 0, 1, 2, 3, 4, or 5 and y may be 0 or 1. When x is 0, y may be 1. R, R, R, and Rmay each independently be hydrogen, an alkyl group having 1 to 5 carbons, or an aminoalkyl group having 1 to 5 carbons.

Method of manufacturing semiconductor device

An atomic layer etching method capable of precisely etching a metal thin film at units of atomic layer from a substrate including the metal thin film, includes forming a metal layer on a substrate, and etching at least a portion of the metal layer. The etching at least a portion of the metal layer includes at least one etching cycle. The at least one etching cycle includes supplying an active gas onto the metal layer, and supplying an etching support gas after supplying the active gas. The etching support gas is expressed by the following general formula wherein each of R1, R2, R3, R4 and R5 independently includes hydrogen or a C-Calkyl group, and N is nitrogen.

Atomic layer etching method and semiconductor device manufacturing method using the same

Described herein are metal compounds and methods of fabricating semiconductor devices using the same. The metal compounds include a material of Chemical Formula 1. 

Metal compounds and methods of fabricating semiconductor devices using the same

Provided are an aluminum compound and a method for manufacturing a semiconductor device using the same. The aluminum compound may be represented by Formula 1. 

Aluminum compound and method for manufacturing semiconductor device using the same

A method of manufacturing a semiconductor device, the method including providing a metal precursor on a substrate to form a preliminary layer that includes a first metal; providing a reducing agent on the preliminary layer, the reducing agent including a compound that includes a second metal; and providing a reactant on the preliminary layer to form a metal-containing layer, wherein the second metal has multiple oxidation states, the second metal in the reducing agent having a lower oxidation state among the multiple oxidation states prior to providing the reducing agent on the preliminary layer.

A lanthanum compound, a method of synthesizing a thin film, and a method of manufacturing an integrated circuit device, the compound being represented by Formula 1 below, 

Lanthanum compound and methods of forming thin film and integrated circuit device using the lanthanum compound

A method of fabricating a semiconductor device, the method including forming semiconductor patterns on a substrate such that the semiconductor patterns are vertically spaced apart from each other; and forming a metal work function pattern to fill a space between the semiconductor patterns, wherein forming the metal work function pattern includes performing an atomic layer deposition (ALD) process to form an alloy layer, and the ALD process includes providing a first precursor containing an organoaluminum compound on the substrate, and providing a second precursor containing a vanadium-halogen compound on the substrate.

Method of fabricating semiconductor device

A silicon-containing intermediate is synthesized by reacting a lanthanum tris[bis(trialkylsilyl)amide] complex with an alkylcyclopentadiene. A lanthanum compound is synthesized by reacting the silicon-containing intermediate with a dialkylamidine-based compound.

Method of forming a thin film

A method of forming a thin film and an integrated circuit device, including forming a first reaction inhibiting layer chemisorbed on a first portion of a lower film by supplying a reaction inhibiting compound having a carbonyl group to an exposed surface of the lower film at a temperature of about 300&#xb0; C. to about 600&#xb0; C.; forming a first precursor layer of a first material chemisorbed on a second portion of the lower film at a temperature of about 300&#xb0; C. to about 600&#xb0; C., the second portion being exposed through the first reaction inhibiting layer; and forming a first monolayer containing the first material on the lower film by supplying a reactive gas to the first reaction inhibiting layer and the first precursor layer and removing the first reaction inhibiting layer from the surface of the lower film, and thus exposing the first portion.

Method of forming thin film and method of manufacturing integrated circuit device using the same

Lanthanum compound, method of synthesizing lanthanum compound, lanthanum precursor composition, method of forming thin film, and method of manufacturing integrated circuit device

A method of forming a thin film includes forming a niobium-containing film on a substrate by using a niobium precursor composition and a reactant, the niobium precursor composition including a niobium compound represented by Formula (1):Nb(RCp)(L)&#x2003;&#x2003;Formula (1)

Methods of forming thin film and fabricating integrated circuit device using niobium compound

Provided are an aluminum compound represented by General Formula (I), a method of forming a thin film, and a method of fabricating an integrated circuit device. 

Aluminum compound and methods of forming thin film and fabricating integrated circuit device by using the same

An aluminum compound is represented by Chemical Formula (I) and is used as a source material for forming an aluminum-containing thin film.

Aluminum compound, method of forming thin film by using the same, and method of fabricating integrated circuit device

The inventive concepts provide semiconductor devices and methods for manufacturing the same in which the method includes forming a capacitor including a bottom electrode, a dielectric layer and a top electrode sequentially stacked on a substrate, and also where formation of the top electrode includes forming a first metal nitride layer on the dielectric layer, and forming a second metal nitride layer on the first metal nitride layer, in which the first metal nitride layer is disposed between the dielectric layer and the second metal nitride layer, and the first metal nitride layer is formed at a temperature lower than a temperature at which the second metal nitride layer is formed.

Method for manufacturing a capacitor for semiconductor devices

Provided are a heterostructured nickel compound including a nickel amidinate ligand and an aliphatic alkoxy group and a method of forming a thin film including the heterostructured nickel compound. The method includes forming a nickel-containing layer on a substrate by using the heterostructured nickel compound including the nickel amidinate ligand and the aliphatic alkoxy group.

Nickel compound and method of forming thin film using the nickel compound

Growing community of inventors

Hwaseong-si, South Korea

Gyu-Hee Park