Stats Chippac Pte. Ltd.

Gwang Kim

YongTaek Lee

ByungHoon Ahn

HyunTai Kim

HunTeak Lee

JunHo Ye

Kai Liu

Koo Hong Lee

Jong-Woo Ha

Youngcheol Kim

Myung Kil Lee

JuHyun Park

YouJoung Choi

MinKyung Kim

Yongwoo Lee

Namgu Kim

A semiconductor device has a substrate and a first component disposed over a first surface of the substrate. A connector is disposed over the first surface of the substrate. A first encapsulant is deposited over the first component while the connector remains outside of the first encapsulant. A shielding layer is formed over the first encapsulant while the connector remains outside of the shielding layer. A second component is disposed over a second surface of the substrate. A solder bump is disposed over the second surface of the substrate. A second encapsulant is deposited over the second surface of the substrate. An opening is formed through the second encapsulant to expose the solder bump. A solder ball is disposed in the opening. The solder ball and solder bump are reflowed to form a combined solder bump.

Double-sided partial molded SiP module

A semiconductor device has a substrate and an electrical component disposed over a surface of the substrate. An antenna interposer is disposed over the substrate. A first encapsulant is deposited around the antenna interposer. The first encapsulant has a high dielectric constant. The antenna interposer has a conductive layer operating as an antenna and an insulating layer having a low dielectric constant less than the high dielectric constant of the first encapsulant. The antenna interposer is made from an antenna substrate having a plurality of antenna interposers. Bumps are formed over the antenna substrate and the antenna substrate is singulated to make the plurality of antenna interposers. A second encapsulant is deposited over the electrical component. The second encapsulant has a low dielectric constant less than the high dielectric constant of the first encapsulant. A shielding layer is disposed over the second encapsulant.

Semiconductor device and method of forming semiconductor package with RF antenna interposer having high dielectric encapsulation

Double-sided partial molded SIP module

A semiconductor device has a substrate and RF FEM formed over the substrate. The RF FEM includes an LC low-pass filter having an input coupled for receiving a transmit signal. A Tx/Rx switch has a first terminal coupled to an output of the LC filter. A diplexer has a first terminal coupled to a second terminal of the Tx/Rx switch and a second terminal for providing an RF signal. An IPD band-pass filter has an input coupled to a third terminal of the Tx/Rx switch and an output providing a receive signal. The LC filter includes conductive traces wound to exhibit inductive and mutual inductive properties and capacitors coupled to the conductive traces. The IPD filter includes conductive traces wound to exhibit inductive and mutual inductive properties and capacitors coupled to the conductive traces. The RF FEM substrate can be stacked over a semiconductor package containing an RF transceiver.

Semiconductor device and method of forming RF FEM with LC filter and IPD filter over substrate

A semiconductor device has a first semiconductor die containing a low pass filter and baluns. The first semiconductor die has a high resistivity substrate. A second semiconductor die including a bandpass filter is mounted to the first semiconductor die. The second semiconductor die has a gallium arsenide substrate. A third semiconductor die including an RF switch is mounted to the first semiconductor die. A fourth semiconductor die includes an RF transceiver. The first, second, and third semiconductor die are mounted to the fourth semiconductor die. The first, second, third, and fourth semiconductor die are mounted to a substrate. An encapsulant is deposited over the first, second, third, and fourth semiconductor die and substrate. A plurality of bond wires is formed between the second semiconductor die and first semiconductor die, and between the third semiconductor die and first semiconductor die, and between the first semiconductor die and substrate.

Semiconductor device and method of forming RF FEM and RF transceiver in semiconductor package

A semiconductor device is made by forming an oxide layer over a substrate and forming a first conductive layer over the oxide layer. The first conductive layer is connected to ground. A second conductive layer is formed over the first conductive layer as a plurality of segments. A third conductive layer is formed over the second conductive layer as a plurality of segments. If the conductive layers are electrically isolated, then a conductive via is formed through these layers. A first segment of the third conductive layer operates as a first passive circuit element. A second segment operates as a second passive circuit element. A third segment is connected to ground and operates as a shield disposed between the first and second segments. The shield has a height at least equal to a height of the passive circuit elements to block cross-talk between the passive circuit elements.

Semiconductor device with cross-talk isolation using M-cap

A semiconductor wafer has an insulating layer over a first surface of the substrate. An IPD structure is formed over the insulating layer. The IPD structure includes a MIM capacitor and inductor. A conductive via is formed through a portion of the IPD structure and partially through the substrate. The conductive via can be formed in first and second portions. The first portion is formed partially through the substrate and second portion is formed through a portion of the IPD structure. A first via is formed through a second surface of the substrate to the conductive via. A shielding layer is formed over the second surface of the substrate wafer. The shielding layer extends into the first via to the conductive via. The shielding layer is electrically connected through the conductive via to an external ground point. The semiconductor wafer is singulated through the conductive via.

Semiconductor device and method of forming shielding layer around back surface and sides of semiconductor wafer containing IPD structure

A method of manufacture of a thin package system with external terminals includes: providing a leadframe; providing a template for defining an external bond finger; forming external bond fingers in the template on the leadframe; forming land pad terminals by a first multi-layer plating; providing a die; attaching the die to the land pad terminals above the leadframe with an adhesive on the leadframe; covering an encapsulant over at least portions of the die and the external bond fingers; and removing the leadframe leaving a surface of the adhesive coplanar with a surface of the encapsulant.

Thin package system with external terminals and method of manufacture thereof

Semiconductor device and method of forming RF FEM with IC filter and IPD filter over substrate

Semiconductor device with cross-talk isolation using M-cap and method thereof

A semiconductor package system is provided including: providing a substrate having substrate wiring and a cavity provided therein with a heat sink foil closing off the cavity; attaching a semiconductor die in the cavity to the heat sink foil; and bonding the semiconductor die to the substrate wiring.

Semiconductor package system with substrate heat sink

A thin package system with external terminals and a leadframe is provided. An external bond finger defining template is provided and used to form external bond fingers on the leadframe. A die is provided and attached to the leadframe. At least portions of the die and the external bond fingers are encapsulated, and the leadframe is removed.

Thin package system with external terminals

A stacked integrated circuit package-in-package system is provided forming a first integrated circuit package having a first peripheral contact, forming a second integrated circuit package having a second peripheral contact, stacking the second integrated circuit package on the first integrated circuit package in a multidirectional offset stack configuration with the first peripheral contact exposed, the multidirectional offset stack configuration provides a second package overhang with the second integrated circuit package above the first integrated circuit package, electrically connecting the first peripheral contact and a package substrate contact along a package first edge, and electrically connecting the second peripheral contact and the package substrate contact along a package second edge.

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Kyungkido, South Korea

Gwang Kim