Texas Instruments Corporation

Guohong Zhang

Sean Christopher O'Brien

Stephen J DeMoor

Theodore Warren Houston

Kayvan Sadra

Robert Soper

Changan Wang

Sean O'Brien

Sean C O'BRIEN

Merging sub-resolution assist features includes receiving a mask pattern that includes the sub-resolution assist features. A first sub-resolution assist feature is selected to merge with a second sub-resolution assist feature. A merge bar width of a merge bar is established. A distance between the first sub-resolution assist feature and the second sub-resolution assist feature is determined. A merging technique is determined in accordance with the distance and the merge bar width. The first sub-resolution assist feature and the second sub-resolution assist feature are merged according to the identified merging technique.

Merging sub-resolution assist features of a photolithographic mask

The present application is directed to a method for determining photolithography focus errors during production of a device. The method comprises providing a substrate and forming a photoresist pattern on the substrate. The photoresist pattern comprises a device pattern and one or more blocking scheme patterns. The process further comprises performing a device manufacturing process using the photoresist pattern as a mask to form sensor windows on the substrate. One or more focus error sensors are formed in the sensor windows. Focus errors are determined using the focus error sensors. Other embodiments of the present application are directed to wafers comprising one or more focus error sensors positioned in sensor windows.

Method of mapping lithography focus errors

Merging sub-resolution assist features of a photolithographic mask through the use of a merge bar

According to one embodiment, a method for patterning a set of features for a semiconductor device includes providing a mask including a substrate and at least one pair of first and second main features disposed on a substrate. The method also includes positioning the mask over a layer of light-sensitive material, and exposing the mask to a light source. The mask also includes at least one sub-resolution feature connecting the first and second main features.

Method and system for contiguous proximity correction for semiconductor masks

A method of operating a computing system to determine reticle data. The reticle data is for completing a reticle for use in projecting an image to a semiconductor wafer. The method receives circuit design layer data comprising a desired circuit layer layout, and the layout comprises a plurality of lines. The method also identifies in the plurality of lines a first line portion for use as a first circuit function and a second line portion for use as a second circuit function that differs from the first circuit function. The first line portion is parallel and adjacent to the second line portion. The method also provides the reticle data in an output data file for use in forming features on the reticle. The method also indicates parameters for forming first and second primary features as well as at least one assist feature on the reticle having an area between the first primary feature and the second primary feature, wherein in use of the reticle for use in projecting the image to the semiconductor wafer the area will favor greater assistance to the first primary feature as compared to the second primary feature.

Method of locating sub-resolution assist feature(s)

Characterizing an exposure tool involves receiving data describing a pattern formed at a wafer. The pattern is formed by illuminating the wafer using an exposure tool, and the data has a scan direction and slit direction. An image field is mapped according to the data to determine an image field error of the data, and the image field error is separated from the data to reduce variation of the data in the scan direction. The data is reduced to the slit direction. Errors associated with the exposure tool are determined from the data in order to characterize the exposure tool.

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Plano, TX, United States of America

Guohong Zhang