Merck Patent Gmbh

Guo Liu

Charles Dezelah

Jacob Woodruff

Ravi Kanjolia

Joby Eldo

Ravindra Kanjolia

Mark C Potyen

Jean-Sebastien Lehn

Bin Xi

Methods of forming molybdenum-containing films are provided. The methods include thermally depositing a first film on a surface of a substrate, for example, at a first temperature less than or equal to about 400° C., and thermally depositing the molybdenum-containing film (second film) on at least a portion of the first film, for example, at a second temperature of greater than about 400° C. The first film can include an elemental metal, for example, tungsten, molybdenum, ruthenium, or cobalt. The second film includes a reaction product of a molybdenum-containing precursor and a reducing agent.

Methods of forming molybdenum-containing films deposited on elemental metal films

Methods of forming ruthenium-containing films by atomic layer deposition and/or chemical vapor deposition are provided. The methods comprise delivering at least one precursor and an oxygen-free co-reactant, such as hydrazine or alkylhydrazine, to a substrate to form a ruthenium-containing film, wherein the at least one precursor corresponds in structure to Formula (I): (L)Ru(CO), wherein L is selected from the group consisting of a linear or branched C-C-alkenyl and a linear or branched C-C-alkyl; and wherein L is optionally substituted with one or more substituents independently selected from the group consisting of C-C-alkenyl, C-C-alkyl, alkoxy and NRR; wherein Rand Rare independently alkyl or hydrogen; and annealing the ruthenium-containing film under vacuum or in the presence of an inert gas such as Ar, N, or a reducing gas such as Hor a combination thereof.

Methods of vapor deposition of ruthenium using an oxygen-free co-reactant

Transition metal precursors are disclosed herein along with methods of using these precursors to deposit metal thin films. Advantageous properties of these precursors and methods are also disclosed, as well as superior films that can be achieved with the precursors and methods.

Deposition of molybdenum thin films using a molybdenum carbonyl precursor

Metal complexes containing substituted allyl ligands and methods of using such metal complexes to prepare metal-containing films are provided.

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Somerville, NJ, United States of America

Guo Liu