Industrial Technology Research Institute

Innovative Nanotech Incorporated

Guo-Dung Chen

Wei-En Fu

Bo-Ching He

Chun-Ting Liu

Wen-Li Wu

Yen-Liang Lin

Hsin-Chia Ho

Sheng-Hsun Wu

Han-Yu Chang

This disclosure relates to an apparatus and methods for applying X-ray reflectometry (XRR) in characterizing three dimensional nanostructures supported on a flat substrate with a miniscule sampling area and a thickness in nanometers. In particular, this disclosure is targeted for addressing the difficulties encountered when XRR is applied to samples with intricate nanostructures along all three directions, e.g. arrays of nanostructured poles or shafts. Convergent X-ray with long wavelength, greater than that from a copper anode of 0.154 nm and less than twice of the characteristic dimensions along the film thickness direction, is preferably used with appropriate collimations on both incident and detection arms to enable the XRR for measurements of samples with limited sample area and scattering volumes. In one embodiment, the incident angle of the long-wavelength focused X-ray is ≥24°, and the sample area is ≤25 μm×25 μm.

X-ray reflectometry apparatus and method thereof for measuring three dimensional nanostructures on flat substrate

This disclosure relates to an apparatus and methods for applying X-ray reflectometry (XRR) in characterizing three dimensional nanostructures supported on a flat substrate with a miniscule sampling area and a thickness in nanometers. In particular, this disclosure is targeted for addressing the difficulties encountered when XRR is applied to samples with intricate nanostructures along all three directions, e.g. arrays of nanostructured poles or shafts. Convergent X-ray with long wavelength, greater than that from a copper anode of 0.154 nm and less than twice of the characteristic dimensions along the film thickness direction, is preferably used with appropriate collimations on both incident and detection arms to enable the XRR for measurements of samples with limited sample area and scattering volumes.

The present disclosure relates to a device and a method for measuring a thickness of an ultrathin film on a solid substrate. The thickness of the target ultrathin film is measured from the intensity of the fluorescence converted by the substrate and leaking and tunneling through the target ultrathin film at low detection angle. The fluorescence generated from the substrate has sufficient and stable high intensity, and therefore can provide fluorescence signal strong enough to make the measurement performed rapidly and precisely. The detection angle is small, and therefore the noise ratio is low, and efficiency of thickness measurement according to the method disclosed herein is high. The thickness measurement method can be applied into In-line product measurement without using standard sample, and therefore the thickness of the product can be measured rapidly and efficiently.

Device and method applicable for measuring ultrathin thickness of film on substrate

An apparatus for mixing a solution includes first and second tanks, a sampling element, a flow control element and a mixing assembly is provided. The first tank has a first chamber and a first fluid inlet. The second tank has a second chamber. The sampling element is connected and communicated with the first chamber. The flow control element connects and communicates with the first chamber through the first fluid inlet. Two opposite ends of the mixing assembly connect and communicate with the first chamber and the second chamber, respectively.

Apparatus for mixing solution

A contactless dual-plane positioning method is disclosed. In this method, an X ray is provided. The X ray passes through a first test piece along a light incident axis. A scattering pattern generated by the X ray passing through the first test piece, and a scatting light intensity corresponding to the scattering pattern are obtained. According to the scattering light intensity, the first test piece is pivoted along a first axis or a second axis until the scattering intensity is greater than or equal to a predetermined intensity. At least three measurement distances between a second test piece and the first test piece are then obtained. According to the measurement distances, an included angle between the second test piece and the light incident axis is adjusted by pivoting the second test piece along a third axis or a fourth axis until the differences between any two measurement distances are less than a predetermined threshold value.

Contactless dual-plane positioning method and device

An apparatus for mixing a solution includes first and second tanks, a sampling element, a flow control element, a mixing assembly, first and second air-intake systems, and first and second air-exhaust systems. The first tank has a first chamber. The second tank has a second chamber. The sampling element has an extraction port located in the first chamber. The flow control element connects and communicates with the first chamber. Two opposite ends of the mixing assembly connect and communicate with the first chamber and the second chamber, respectively. The first air-intake system and the first air-exhaust system connect and communicate with the first chamber. The second air-intake system and the second air-exhaust system connect and communicate with the second chamber.

Growing community of inventors

Taipei, Taiwan

Guo-Dung Chen