Stats Chippac Pte. Ltd.

GunHyuck Lee

SangHyun Son

HeeSoo Lee

MinJung Kim

YuJeong Jang

Bokyeong Hwang

Hyeoneui Lee

HyunKyu Lee

An interconnect device comprises an insulating frame. The insulating frame comprises: a top insulating layer formed uppermost of the insulating frame and occupying an entirety of a top surface of the insulating frame; a bottom insulating layer formed lowermost of the insulating frame and occupying an entirety of a bottom surface of the insulating frame; and a central insulating layer that includes a plurality of insulators disposed between the top insulating layer and the bottom insulating layer, wherein the plurality of insulators form a plurality of through-holes between a first lateral surface and a second lateral surface of the central insulating layer. The interconnect device further comprises a plurality of bridge conductors, wherein each of the plurality of bridge conductors is disposed within a respective one of the plurality of through-holes and extends between the first lateral surface and the second lateral surface of the central insulating layer.

Interconnect device and semiconductor assembly incorporating the same

A semiconductor device has an interconnect substrate with a conductive via. A first electrical component is disposed over a major surface of the interconnect substrate. An electrical interconnect compound is disposed over the conductive via exposed from a side surface of the interconnect substrate. The electrical interconnect compound can be applied with a tilt nozzle oriented at an angle. A second electrical component is disposed on the electrical interconnect compound on the conductive via exposed from the side surface of the interconnect substrate. A plurality of second electrical components can be disposed on two or more side surfaces of the interconnect substrate. The interconnect substrate can have a plurality of stacked conductive vias and the second electrical component is disposed over the stacked conductive vias. An encapsulant is deposited over the first electrical component and interconnect substrate. A shielding layer can be formed over the encapsulant.

Semiconductor device and method of disposing electrical components over side surfaces of interconnect substrate

A semiconductor device is made by providing a strip substrate including a plurality of units. A hole is formed in the strip substrate. An encapsulant is deposited over the strip substrate. A mask is disposed over the strip substrate and encapsulant with a leg of the mask disposed in the hole. A shielding layer is formed over the mask and strip substrate. The mask is removed after forming the shielding layer. The strip substrate is singulated to separate the plurality of units from each other after forming the shielding layer.

Semiconductor device and method for selective EMI shielding using a mask

A semiconductor device has a first substrate and a first electrical component disposed over the first substrate. A first support frame is disposed over the first substrate. The first support frame has a horizontal support channel extending across the first substrate and a vertical support brace extending from the horizontal support channel to the first substrate. The first support frame can have a vertical shielding partition extending from the horizontal support channel to the first substrate. An encapsulant is deposited over the first electrical component and first substrate and around the first support frame. A second electrical component is disposed over the first electrical component. A second substrate is disposed over the first support frame. A second electrical component is disposed over the second substrate. A third substrate is disposed over the second substrate. A second support frame is disposed over the second substrate.

Semiconductor device and method of stacking devices using support frame

A semiconductor device has a first semiconductor package including a substrate and an encapsulant deposited over the substrate. An adhesive tape is disposed on the encapsulant. A conductive via is formed by trench cutting through the adhesive tape and encapsulant to expose the substrate. A second semiconductor package is disposed over the adhesive tape opposite the first semiconductor package. The first semiconductor package and second semiconductor package are bonded together by the adhesive tape.

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Incheon, South Korea

GunHyuck Lee