Nxp B.v.

Guido Albermann

Hartmut Buenning

Sascha Moeller

Martin Lapke

Thomas Rohleder

Antonius Hendrikus Jozef Kamphuis

Johannes Cobussen

Michael Zernack

Leo M Higgins, Iii

Christian Zenz

Heimo Scheucher

David Ceccarelli

Heiko Backer

A technique for handling an integrated circuit/tape assembly having a plurality of integrated circuits supported by underlying dicing tape involves placing the integrated circuit/tape assembly on a bottom file frame carrier (FFC) frame having structure (e.g., an inner rim or flexible pegs), placing a top FFC frame having a central opening over the integrated circuit/tape assembly, and mating the top and bottom FFC frames such that the dicing tape is pulled over the structure thereby laterally stretching the dicing tape, which breaks wafer saw bows holding the integrated circuits together. The lateral stretching of the dicing tape increases distance between adjacent integrated circuits in at least two mutually orthogonal lateral directions, thereby inhibiting the adjacent integrated circuits from colliding during shipment or storage for subsequent processing. The resulting assembly can be thinner than conventional FFC configurations, which results in more efficient shipment and storage.

Technique for handling diced wafers of integrated circuits

A saw bow is provided and designed such that the conductors of the saw bow will break at a predictable location when using modern dicing techniques. This results in a break in the circuit provided by the saw bow, with any exposed conductors not being on the die side. Further, by providing a known breaking point in the saw bow, modern dicing techniques such as plasma dicing can be used, thereby allowing for the saw lane to be made narrower, which will in turn increase the number of wafers that can be included on a wafer.

Integrated circuit saw bow break point

Embodiments are provided herein for separating integrated circuit (IC) device die of a wafer, the wafer having a front side with an active device region and a back side, the active device region having a plurality of active devices arranged in rows and columns and separated by cutting lanes, the method including: attaching the front side of the wafer onto a first dicing tape; forming a modification zone within each cutting lane through the back side of the wafer, wherein each modification zone has a first thickness near a corner of each active device and a second thickness near a center point of each active device, wherein the second thickness is less than the first thickness; and propagating cracks through each cutting lane to separate the plurality of active devices.

Variable stealth laser dicing process

Consistent with an example embodiment, there is a method for preparing an integrated circuit (IC) device from a wafer substrate, the wafer substrate having a top-side surface with a plurality of active device die separated by saw lanes and an opposite under-side surface. The method comprises coating the under-side surface of the wafer substrate with a resilient coating, locating the position of the saw lanes from the underside surface, blade dicing trenches in the resilient material to expose under-side bulk material in the position of saw lanes, and plasma etching through the trenches to remove the exposed under-side bulk material.

Plasma dicing with blade saw patterned underside mask

Consistent with an example embodiment, there is a method for preparing integrated circuit (IC) device die from a wafer substrate having a front-side with active devices and a back-side. The method comprises pre-grinding the backside of a wafer substrate to a thickness. The front-side of the wafer is mounted onto a protective foil. A laser is applied to the backside of the wafer, at first focus depth to define a secondary modification zone in saw lanes. To the backside of the wafer, a second laser process is applied, at a second focus depth shallower than that of the first focus depth, in the saw lanes to define a main modification zone, the secondary modification defined at a pre-determined location within active device boundaries, the active device boundaries defining an active device area. The backside of the wafer is ground down to a depth so as to remove the main modification zone. The IC device die are separated from one another by stretching the protective foil.

Combination grinding after laser (GAL) and laser on-off function to increase die strength

Consistent with an example embodiment, a method for preparing integrated circuit (IC) device die from a wafer substrate having a front-side with active devices and a back-side, comprises mounting the front-side of the wafer onto protective foil. A laser is applied to saw lane areas on the backside of the wafer, at a first focus depth to define a modification zone; the modification zone defined at a pre-determined depth within active device boundaries and the active device boundaries defined by the saw lane areas. The protective foil is stretched to separate IC device die from one another and expose active device side-walls. With dry-etching of the active device side-walls, the modification zone is substantially removed.

Plasma etching and stealth dicing laser process

An apparatus, device and method for wafer dicing is disclosed. In one example, the apparatus discloses: a wafer holding device having a first temperature; a die separation bar moveably coupled to the wafer holding device; and a cooling device coupled to the apparatus and having a second temperature which enables the die separation bar to fracture an attachment material in response to movement with respect to the wafer holding device. In another example, the method discloses: receiving a wafer having an attachment material applied to one side of the wafer; placing the wafer in a holding device having a first temperature; urging a die separation bar toward the wafer; and cooling the attachment material to a second temperature, which is lower than the first temperature, until the attachment material fractures in response to the urging.

Apparatus, device and method for wafer dicing

Consistent with an example embodiment, there is a method for assembling a wafer level chip scale processed (WLCSP) device from a wafer substrate, the method comprises grinding the back-side of the wafer substrate to a prescribed thickness. A plurality of trenches is sawed along a plurality of device die boundaries on a back-side surface of the wafer, the trenches having a bevel profile. The plurality of trenches is etched until the bevel profile of the plurality of trenches is rounded.

Die preparation for wafer-level chip scale package (WLCSP)

Embodiments of methods and systems for processing a semiconductor wafer are described. In one embodiment, a method for processing a semiconductor wafer involves performing laser stealth dicing on the semiconductor wafer to form a stealth dicing layer within the semiconductor wafer and after performing laser stealth dicing, cleaning the semiconductor wafer from a back-side surface of the semiconductor wafer with a blade to remove at least a portion of the stealth dicing layer. Other embodiments are also described.

High die strength semiconductor wafer processing method and system

Integrated circuits () on a wafer comprise a wafer substrate () and a structure applied on a surface () of the wafer substrate (). The structure forms a plurality of integrated circuits () formed on the wafer substrate () and the integrated circuits () are separated by saw lines (). The structure comprises a plurality of superposed layers (-) formed on the wafer substrate () and a top layer () formed on the superposed layers (-). The integrated circuit () on the wafer further comprise a plurality of alignment marks () intended for aligning a separating device () for separating the integrated circuits () on the wafer into individual integrated circuits () during a separation process, wherein the alignment marks () are formed from at least one of the superposed layers (-).

Growing community of inventors

Hamburg, Germany

Guido Albermann