Applied Materials, Inc.

Mattson Technology, Inc

Guangcai Xing

Gary Eugene Miner

David R Lopes

Satheesh Kuppurao

Christian M Gronet

Peter A Knoot

Ashok K Sinha

Stephen E Savas

Paul Janis Timans

Yashraj K Bhatnagar

Ming Li

Turgut Sahin

Sheeba J Panayil

Zsolt Nenyei

Wilfried Lerch

Kevin Laughton Cunningham

R Suryanarayanan Iyer

Bruce W Peuse

Ravi Jallepally

Sing-Pin Tay

David B Noble

Georg Roters

Nathan D'Astici

Sathees Kuppurao

Yaozhi Hu

Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 to O2 gas. The process window may be enlarged by injecting H2O steam into the plasma, thereby enabling oxidation of silicon in the presence of TiN and W, at relatively low temperatures. Selective oxidation is improved by the use of an apparatus having remote plasma and flowing radicals onto the substrate, but blocking ions from reaching the substrate.

Method and apparatus for growing thin oxide films on silicon while minimizing impact on existing structures

Methods for depositing hemispherical grained silicon layers and nanocrystalline grain-sized polysilicon layers are provided. The hemispherical grained silicon layers and nanocrystalline grain-sized polysilicon layers are deposited in single substrate chemical vapor deposition chambers. The hemispherical grained silicon layers and nanocrystalline grain-sized polysilicon layers may be used as electrode layers in semiconductor devices. In one aspect, a two step deposition process is provided to form a nanocrystalline grain-sized polysilicon layer with a reduced roughness.

Single wafer thermal CVD processes for hemispherical grained silicon and nano-crystalline grain-sized polysilicon

An apparatus and method for exposing a substrate to plasma including a first reaction chamber adapted to generate a plasma comprising ions and radicals and a second reaction chamber coupled to the first reaction chamber and adapted to house a substrate at a sight in the second reaction chamber. The second reaction chamber is coupled to the first reaction chamber by an inlet member and radicals of the plasma flow through the inlet member into the second reaction chamber.

Apparatus for exposing a substrate to plasma radicals

A method of forming an oxide on a substrate. According to the method of the present invention a substrate is placed in a chamber. An oxygen containing gas and a hydrogen containing gas are then fed into the chamber. The oxygen containing gas and the hydrogen containing gas are then caused to react with one another to form water vapor in the chamber. The water vapor then oxidizes the substrate.

Method and apparatus for insitu vapor generation

Method for insitu vapor generation for forming an oxide on a substrate

A system and method of forming an oxide in the presence of a nitrogen-containing material. A substrate having a nitrogen-containing material on a surface is placed in a reaction chamber. An oxygen-containing gas, or an oxygen-containing gas and a hydrogen-containing gas are provided to the chamber and reacted in the chamber. The reactive gases are used to oxidize the surface of the substrate and displace the nitrogen-containing material from the interface.

Method of oxidizing a substrate in the presence of nitride and

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